LM5112MYX

• Composite CMOS and bipolar outputs reduce output current variation
• 7A sink/3A source current
• Fast propagation time (25 ns typical)
• Fast rise and fall times (14 ns/12 ns rise/2 nF load drop)
• Inverting and non-inverting inputs provide a single device or configuration
• Supply of railway undervoltage lockout protection
• Split power or single supply operation at dedicated input ground (IN_REF).
• Power enhanced 6-pin LLP package (3.0 mm x 3.0 mm) or thermally enhanced MSOP8-EP package
• The output swings V_CCto V_EENegative phase can be entered to ground

illustrate

The LM5112 MOSFET gate driver provides a small LLP-6 current (SOT23 equivalent footprint) current for high peak gate drive or an 8-pin exposed pad MSOP package, increasing the power consumption required for power high frequency operation. The compound consists of an output drive stage MOS and bipolar transistors running in parallel, along with sinking capacitive loads over 7A peaks and more. Combines the uniqueness of MOS and bipolar devices to reduce drive current, voltage, and temperature variations. Undervoltage lockout protection to prevent damage to the MOSFET due to insufficient gate on-voltage. The LM5112 provides inverting and non-inverting inputs to meet gate drive requirements for both inverting and non-inverting and single device types.