LM5112SDX

• Compound CMOS and bipolar outputs reduce output current variation
• 7A sink/3A current source
• Fast propagation time (25 ns typical)
• Fast rise and fall times (14 ns/12 ns ramp/drop 2 nF load)
• Inverting and non-inverting inputs provide a single device or configuration
• Power rails with undervoltage lockout protection
• Dedicated input ground for split power or single-supply operation (IN_REF)
• Power enhanced 6-pin LLP package (3.0 mm x 3.0 mm) or heat-enhanced MSOP8-EP package
• The output swings from V_CCto V_EENegative phase can be entered to ground

illustrate

The LM5112 MOSFET gate driver is available in a high peak gate drive current in a tiny LLP-6 package (SOT23 package equivalent footprint) or an 8-pin exposed pad MSOP package for increased power and power consumption required for high frequency operation. The composite output drive stage consists of the MOS and bipolar transistors running in parallel, sinking together above the capacitive load 7A peak. The unique feature of the combination of MOS and bipolar devices reduces current variations in drive voltage and temperature. Undervoltage lockout protection to prevent damage to the MOSFET's gate with insufficient opening voltage. The LM5112 provides inverting and non-inverting inputs to meet the gate drive requirements of both inverting and non-inverting with a single device type.