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LMH6629MFE
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LMH6629MFE

  • Category:Operational amplifiers
  • Product Name:Ultra-low noise, high speed operational amplifier
  • Manufacturers:NSC
  • Production Batch Number:11+
  • Encapsulation:SOT-23
  • Stock Status:There is stock
  • Stock Quantity:16300
  • Minimum order quantity: 1
  • Details:Click here to find PDF information on the LMH6629MFE
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  • Product introduction

peculiarity

designateVS =5V,RL =100Ω,AV= 10V/V LLP - 8 encapsulation, unless specified

- 3dB bandwidth

900 MHz

Input voltage noise

0.69 NV / hertz

Maximum input offset voltage. temperature

± 0.8 mV

Slew rate

1600 V/μs

HD2 @ F = 1MHz, 2VPP

-90 dBc

HD3 @ F = 1MHz, 2VPP

-94 dBc

Supply voltage range

2.7V to 5.5V

Typical supply current

15.5 mAh

You can choose points. gain

4 or 10 V / V

Enable time

75 nanoseconds

Output current

± 250 mAh

LLP-8 and SOT23-5 packages

illustrate

The LMH6629 is a high speed, ultra-low noise amplifier designed for high gain and wideband applications requiring low noise in communications, test and measurement, optical and ultrasonic systems.

While the LMH6629 operates in the input common-mode range, underground and output swing ease in single-supply applications, extending rails in the 0.8V range from 2.7 to 5.5V supplies. Heavy loads up to ± 250 mA drive through high frequency large signals with the LMH6629's -3dB bandwidth of 900 MHz and 1600 V/μs slew rate. The LMH6629 (LLP-8 package) features user-selectable 4 or 10 minimum pull COMP pins for high or low gain control internal compensation, thus avoiding the need for external compensation capacitors required in competitive equipment. The compensation for the SOT23-5 package is internally set to a minimum gain stabilization of 10 V/V The LLP-8 package also provides power-down enable/disable functionality.

Low Input Noise (0.69nV / HERTZ AND 2.6 PA / Hz), low distortion (HD2/HD3 = dBc/-94 of -90 dBc) and ultra-low DC error (800 μVV).OSThe highest temperature ± 0.45 μV/°C drift) allows for accurate coupling of AC and DC operation applications.

The LMH6629 is manufactured on a proprietary SiGe process manufactured by National Semiconductor Corporation and comes in a 3mm x 3mm 8-pin LLP, as well as a SOT23-5 package.


apply

  • Instrumentation amplifiers
  • Ultrasound preamplifier
  • Wideband active filter
  • photoelectricity
  • Medical imaging systems
  • Base station amplifiers
  • Low noise single-ended-to-differential conversion
  • Transimpedance amplifier

andLMH6629MFERelated ICs are:


Model Manufacturers lot number encapsulation illustrate
LMH6629MFE NSC 11+ SOT-23 Ultra-low noise, high speed operational amplifier

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