MC33395TEWR2 Three-phase MOSFET pre-driver
MC33395 combine a gate driver, charge pump, current sensing, and the necessary protection circuitry to drive the 6 N-channel power MOSFETs in a 3-phase bridge configuration. Mode logic incorporates a bridge for a low-side FET or high-side FET for a pulse-width modulated (PWM) signal routed, or a low-side and high-side bridge that provides complementary PWM outputs. Pulse width modulation up to 28 kilohertz frequencies is possible. A 3-phase half-bridge gate driver is required with minimal external components: three tiny capacitor charge pumps, a current-sense resistor, and some current-limiting comparators with bias resistors. Built-in protection circuitry, MOS-FET bridges to prevent damage, and driver ICs include: overvoltage shutdown, overtemperature shutdown, overcurrent shutdown, undervoltage shutdown, reverse battery detection, and a cut-off (reverse connection of the MOSFET via an external battery).
Features-------------------------------------------------- ------------------------------ Driver, 6 N-channels, low Rds(on) power MOSFET, built-in charge pump, built-in current detection comparator, built-in PWM mode control logic, built-in protection circuitry, designed for fractional overall horsepower brushless DC motors。微芯百年电子科技-专业sensor