MMZ25332BT1

• Product introduction

MMZ25332BT1 1800 to 2800 MHz, 26.5 dBm, 33 dBm InGaP HBT

MMZ25332BT1beLevel 2，High linearitytargetInGaP HBTBroadbandamplifier，Designed forPicocell base station，Picocellular，WLAN（802.11g/n），W-CDMA，TD-SCDMAandLTEWireless broadband applications。It provides:Excellent linearityfor-50 dBcACPRtargetLTE，W-CDMAAir interface，Up22 dBmOutput power，from1800-2800 MHztargetFrequency coverage。It worksfrom3 to 5submitof the supply voltage。The amplifier isFully enteredmatching，needMinimal external matchingoutput，LocatedatCost-effective，Surface mountQFN3x3 packaging。The device provides:nationalState-of-the-art reliability, durability, temperature stabilityandESDperformance。
Characteristic:
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1800-2800megahertz：
P1dB：33 dBm@2500 MHz
Power gain:26.5decibel@2500 MHz
dBmOIP3：48@2500 MHz
EVM 3％，26.5 dBmPower output，WiMAX（802.16e standard）
Active biasControl (exterioradjustable）
single3 to 5Volt power
Single-endedPower detector
Cost-effectiveQFNSurface mount package
RoHS compliant
On tapes and reels。 T1Suffix =1000unit，12Millimeter tapewide，7 inch rolls.

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