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OP224ESA-B1
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OP224ESA-B1

  • 所属类别:二极管
  • 产品名称:高可靠性GaAIAs红外发光二极管
  • 厂商:OPTEK
  • 生产批号:12+
  • 封装:DIP
  • 库存状态:有库存
  • 库存量:3000
  • 最低订购量:1
  • 详细资料:点击查找OP224ESA-B1的pdf资料
  • 点击询价
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  • Product Introduction

OP224ESA-B1 

High-reliability GaAIAs infrared light-emitting diodes
OP223,OP224(TX,TXV)
OP224(S)
Illustrate:
Each OP223 (TX, TXV) and OP224 (TX, TXV) device is 890 nm of high-reliability gallium aluminum arsenide
A small, sealed "pill" type package can be installed directly with an IR light-emitting diode
Mounted to PCBoards. The gallium aluminum arsenide feature provides twice the output of gallium radiation
Arsenide at the same forward current.
After manufacturing electrical tests, the equipment handles 100% of OPTEK's inspection plan,
This is modeled after MIL-PRF-19500. OP223 (TX, TXV) centered at 890 nm wavelength
OP224(TX,TXV)。
TX and TXV equipment after processing OPTEK's military inspection program, MIL-PRF-19500 pattern.
S equipment is processed, OPTEK pattern after military inspection plan
MIL-STD-883
For additional design information and reliability (degradation) data, please refer to Application Bulletin No. 208 and 210.
For more information, please contact your local sales representative or OPTEK.
Peculiarity:
OPTEK's military inspection plan, pattern processing, to:
After MIL-PRF-19500
Micro-sealed "pill" pack
GaN arsenide output power twice at the same drive current
"S" level screening
Mechanically and spectrally matched OP600 phototransistors
part
number
LED peak
wavelength
Output power/
minute
Mr. Liang
horn
lead
length
OP223TX
890 nm
1.00 mW/cm
2
24°
N / A
OP223TXV
1.50 mW/cm
2
OP224S
OP224TX
OP224TXV
Applications:
Non-contact reflective object sensor
Automated assembly lines
Mechanical automation
Safety of the machine
End Stroke Sensor
Door magnet
Pin #LED sensor
1
anode collector
2
Cathode emission
1
2
inch
[mm]
Dimensions:

Page 2
OPTEK reserves the right to change at any time to improve the design and provide the best possible product.
OPTEK Technologies, Inc. - 1645 Wallace Drive, Carrollton, TX 75006
Phone: (972) 323-2200 or (800) 341-4747
Fax: (972) 323-2396 sensors@optekinc.com www.optekinc.com
Question A.2
07/06
Page 2 3
High-reliability GaAIAs infrared light-emitting diodes
OP223,OP224(TX,TXV)
OP224(S)
Absolute maximum rating
(Fuck.)
One
= 25°C unless otherwise noted)
Storage temperature range
-65
Ø
C to +150
Ø
Ç
Operating temperature range
-55
Ø
C to +125
Ø
Ç
Results in [5 seconds 1/16 inch (1.6 mm) from the soldering iron soldering temperature
(1)
260℃
Reverse voltage
2.0 V,
Continuous forward current
Current 100 mA
power consumption
(2)
100 milliwatts
Exegesis:
1。 There are no clean or low solids. RMA flux recommendations. The time can be extended to 10 seconds when welding with maximum flow.
2。 Linear reduction of 1.00 mW/°C above 25°C.
Electrical characteristics
(Fuck.)
One
= 25°C unless otherwise noted)
symbol
parameter
Smallest typical maximum unit
Test conditions
Input diodes
é
E (Asia Pacific)
Radiated power output
OP223(TX,TXV)
OP224(TX,TXV)
1.00
1.50
-
-
-
-
milliwatt
I
F
= at 50 mA
I
F
= at 50 mA
to five
F
Forward voltage
0.80
-
1.80
to five
I
F
= at 50 mA
I
ŕ
Reverse current
-
-
100
Wei An
to five
ŕ
= 2.0 V,
λ
P-grade
Peak emission wavelength
-
890
-
nanometre
I
F
= at 50 mA
second
Spectral bandwidth between half power
dot
-
80
-
nanometre
I
F
= at 50 mA
Δλ
P-grade
/Temperature
Spectral drift with temperature
-
0.18
-
nano/°CI for:
F
= constant
θ
Hp
The launch angle of the half-power point
-
18
-
Degree me
F
= at 50 mA

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