OPA657

所属类别：JFET/CMOS
产品名称：1.6GHz 低噪声 FET 输入运算放大器
厂商：TI
生产批号：10+
封装：5SOT-23, 8SOIC
库存状态：有库存
库存量：2241
最低订购量：1
详细资料：

Product Introduction

The OPA657 combines high gain bandwidth, low distortion, low voltage noise JFET input stage, and voltage feedback operational amplifier to provide a very high accuracy ADC dynamic range amplifier (analog-to-digital) driving or wideband resistance application. Photodiode applications will see improved noise and bandwidth using this decompensated-period, high-gain bandwidth amplifier.

Very low levels can significantly signal a single OPA657 with outstanding bandwidth, gain, level amplification, and accuracy. A product with a high gain bandwidth of 1.6GHz gives > a 10MHz signal bandwidth up to 160V/five (four dB). Very low input bias current and capacitance will support this performance even relatively high source impedance.

characteristic

High Gain Bandwidth Products: 1.6GHz
High Bandwidth 275MHz (g = 10)
Low input offset voltage: ± 0.25mV
Low input bias current: 2pA
Low input voltage noise: 4.8nV/√Hz
High output current: 70mA
Fast overdrive recovery
apply
- Broadband photodiode amplifier
- Wafer scanning equipment
- The input amplifier of the ADC
- Test and measurement front-end complete
- High-gain precision amplifiers

parameter

			OPA657
IQ per channel (max) (milliamps)			16.3
Slew rate (typical) (V/US)			700
GBW (Typical) (MHz)			1600
Europa (typical) (mA)			70
Harmony (People) (5)			8
and (max) (five)			12
Number of channels			One
Pin/Pack			5SOT - 23，8SOIC
ACL, the minimum stable gain (V/V).			7
Weight @ ACL (MHz)			340
Differential Gain (%)
Phase Error (degrees)
Violet (Max) (mV)			0.6
Total harmonic distortion (finance = 1 MHz) (typical) (decibels)			-72
Establishment time (0.1%) (typical) (nanoseconds)			11
Maximum offset voltage drift (+/-)() (UV/Celsius)			12
Available channels			S
(typical) in flat band Vn (Nevada/rtHz)			5
About. Price (USD)			5.10 \| 100u
Explosion Proof (Max) (North America)			0.02
In-phase input current noise (per year/rtHz)			0.001
Second Harmonic (DBC).			74
third harmonic (DBC).			106
@兆赫			5
Weight @ grams = 2 (MHz)
0.1 dB Bandwidth Flatness (MHz)			30
Operating Temperature Range (°C)			-40 to 85

The OPA657 is associated with:

Model	Manufacturers	lot number	encapsulation	illustrate
2N7002K	NXP	11+	SOT-23	N-channel TrenchMOS FET - Configuration: Single N-channel ; ID DC: 0.3 A; RDS(on): 4400@10V5300@4.5V mOhm; VDSmax: 60 V
OPA698M	TI	10+	8CDIP SB	Unity gain stabilized wideband voltage limiting amplifier
BSN20	NXP	11+	SOT-23	N-channel enhancement mode field-effect transistor - Configuration: Single N-channel ; ID DC: 0.173 A; RDS(on): 15000@10V20000@5V mOhm;
PMBF170	NXP	11+	SOT-23	N-channel enhanced FET Standalone 750mA Li-Ion Battery Charger in 2 x 2 DFN; Package: DFN; No of Pins: 6; Temperature Range: -40°C to +125°C
OPA690	TI	10+	6SOT-23, 8SOIC	Wideband voltage feedback op amp with disable function
TPS60300	TI	09+	MSOP-10	Single-section to 3.0V/3.3V, 20mA dual output, high-efficiency charging pump
TPS60243	TI	09+	MSOP-8	A 170 uVrms zero-ripple switching capacitor boost converter with a fixed 3V output for VCO power
TPS60242	TI	11+	MSOP-8	A 170 uVrms zero-ripple switched capacitor boost converter with a fixed 2.7V output for VCO power
TPS60241	TI	2010	MSOP8	170 uVrms zero-ripple switched capacitor boost converter with fixed 5.0V output for VCO power supplies
OPA656	TI	09+	5SOT-23, 8SOIC	Wideband unity-gain stabilized FET input op-amp

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