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OPA699M

Category:Voltage feedback
Product Name:Gain +4 stabilized wideband voltage limiting amplifier
Manufacturers:TI
Production Batch Number:10+
Encapsulation:8CDIP SB
Stock Status:There is stock
Stock Quantity:5000
Minimum order quantity: 1
Details:

Product introduction

The OPA699 is a wideband, voltage feedback op amp that provides bipolar output voltage limiting, which is stable for gain 4。 When an output voltage control driver that takes double-buffering limits, it attempts to exceed these limits. This new output limits the building preservation limiter offset error to ± 15 millivolts. The op amp operates linearly in the 30 mV range.

The narrow range and low nonlinearity limit offset the limit voltage set within 100 mV of the required linear output 1 nanosecond limit overload signal recovery, ensuring that the signal path will be transparent. In implementation relative to the I/O, the Limit function gives an accuracy limit that specifies any gain and allows the OPA699 to be used in all standard op amp applications.

characteristic

High linearity near limit
Fast recovery from high speed: 1 nanosecond
Limit voltage accuracy: ± 15 millivolts
- 3 - dB bandwidth (grams = 6): 260 MHz
Stable G Four
Slew rate: 1400 V/μs
± 5 V and 5 V power supplies
High gain version of OPA698
Low latency pillars
Nonlinear analog signal processing
Differential amplifiers
IF limiting amplifier
OPA689M replacement
apply
- Blocks recovery using fast overdrive
- Fast ADC input buffer limit

parameter

	OPA699M
Pins/Packets	8CDIP Security Bureau
Operating temperature range(°C)	-55 to 125

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OPA820	TI	10+	5SOT-23, 8SOIC	Unity-gain stabilized, low noise voltage feedback op amp
PMV65XP	NXP	11+	SOT-23-3	P-channel TrenchMOS(tm) extremely low level FET - Configuration: Single P-channel; ID DC: 3.9 A; Qgd (typ): 0.65 nC; RDS(on): 76@4.5
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2N7002E	NXP	11+	SOT-23	N-channel Enhanced FET N-channel TrenchMOS FET - Configuration: Single N-channel; ID DC: 0.3 A; RDS(on): 4400@10V5300@4.5V mOhm; VDSmax: 60 V
2N7002K	NXP	11+	SOT-23	N-channel Enhanced FET N-channel TrenchMOS FET - Configuration: Single N-channel; ID DC: 0.3 A; RDS(on): 4400@10V5300@4.5V mOhm; VDSmax: 60 V
OPA698M	TI	10+	8CDIP SB	Unity-gain stable wideband voltage limiting amplifier
BSN20	NXP	11+	SOT-23	N-channel enhancement mode field-effect transistor - Configuration: Single N-channel; ID DC: 0.173 A; RDS(on): 15000@10V20000@5V mOhm;

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