| Model |
Manufacturers |
lot number |
encapsulation |
illustrate |
| PH5525L |
NXP |
10+ |
SOT669 |
Channel FET logic level TrenchMOS |
| PH6325L |
NXP |
10+ |
SOT-669 |
N-channel FET logic level TrenchMOS |
| PH955L |
NXP |
09+ |
SOT669 |
Channel FET logic level TrenchMOS |
| PH9025L |
NXP |
0927+ |
SOT-669 |
N-channel TrenchMOS logic level FET - Configuration: Single N-channel ; ID DC: 66 A; Qgd (typ): 2.7 nC; RDS(on): 13@4.5 V 9@10 V mOhm; VDSmax: 25.0 V; |
| PMV65XP |
NXP |
11+ |
SOT-23-3 |
P-channel TrenchMOS(tm) extremely low level FET - Configuration: Single P-channel; ID DC: 3.9 A; Qgd (typ): 0.65 nC; RDS(on): 76@4.5 |
| 2N7002E |
NXP |
11+ |
SOT-23 |
N-channel Enhanced FET N-channel TrenchMOS FET - Configuration: Single N-channel; ID DC: 0.3 A; RDS(on): 4400@10V5300@4.5V mOhm; VDSmax: 60 V |
| 2N7002K |
NXP |
11+ |
SOT-23 |
N-channel Enhanced FET N-channel TrenchMOS FET - Configuration: Single N-channel; ID DC: 0.3 A; RDS(on): 4400@10V5300@4.5V mOhm; VDSmax: 60 V |
| BSN20 |
NXP |
11+ |
SOT-23 |
N-channel enhancement mode field-effect transistor - Configuration: Single N-channel; ID DC: 0.173 A; RDS(on): 15000@10V20000@5V mOhm; |
| PMBF170 |
NXP |
11+ |
SOT-23 |
N-Channel Enhanced FET Standalone 750mA Li-Ion Battery Charger in 2 x 2 DFN; Package: DFN; No of Pins: 6; Temperature Range: -40°C to +125°C |
| PMN50XP |
NXP |
10+PB |
SOT23-6 |
P-channel TrenchMOS very low horizontal FET |
| BC847C |
NXP |
10+ |
SOT-23 |
diode |
| SI2304DS |
NXP |
11+ |
SOT23-3 |
N-channel enhanced field-effect transistor N-channel enhancement mode field-effect transistor - Configuration: Single N-channel; ID DC: 1.7 A; Qgd (typ): 1.35 nC; RDS(on): 117@10V1 |
| PMV117EN |
NXP |
11+ |
SOT23-3 |
30 V uTrenchMOS enhanced FET logic level micro TrenchMOS(tm) enhanced logic level FET - Configuration: Single N-channel; ID DC: 2.5 A; Qgd (typ): 1.35 nC; RDS( |
| BSH108 |
NXP |
11+ |
SOT23-3 |
30 V N-channel enhanced FET N-channel enhancement mode field-effect transistor - Configuration: Single N-channel; ID DC: 1.9 A; Qgd (typ): 1.3 nC; RDS(on): 1 |
| BSH114 |
NXP |
11+ |
SOT23-3 |
N-channel enhanced field-effect transistor N-channel enhancement mode field effect transistor - Configuration: Single N-channel; ID DC: 0.85 A; Qgd (typ): 2.1 nC; RDS(on): 500@10V |
| PMV213SN |
NXP |
11+ |
SOT23-3 |
100 V N-channel Enhanced Logic Level FET - Configuration: Single N-channel ID |
| PMV45EN |
NXP |
11+ |
SOT23-3 |
Enhanced Logic Level FET - Configuration: Single N-channel ID Kuta: A;; QGD (typing 5.4): 1.9 CNC; relational database (in); VDSmax mOhm: 42@10V54@4.5V: 30 volts; Packing: SOT23 (TO-236AB tape volume); Container: SMD |
| UDA1341TS |
NXP |
1041+ |
SSOP |
Economy audio CODEC for MiniDisc (MD) home stereo and portable applications |
| BT131-800E |
NXP |
10+ |
TO-92 |
Triacs logic level - IGT: 5 mA; IT (RMS): 1 A; VDRM: 800 V; Package: SOT54 (TO-92); Container: Reel pack axial radial |
| BT131-800D |
NXP |
10+ |
TO-92 |
Triacs logic level - IGT: 5 mA; IT (RMS): 1 A; VDRM: 800 V; Package: SOT54 (TO-92); Container: Reel pack axial radial |