| Model |
Manufacturers |
lot number |
encapsulation |
illustrate |
| PSMN4R0-30YL |
NXP |
10+ |
SOT669 |
Channel FET logic level TrenchMOS |
| PH3830L |
NXP |
10+ |
SOT669 |
Channel FET logic level TrenchMOS |
| PSMN3R5-30YL |
NXP |
10+ |
SOT669 |
Channel FET logic level TrenchMOS |
| PH3330L |
NXP |
10+ |
SOT669 |
Channel FET logic level TrenchMOS |
| PSMN059-150Y |
NXP |
10+ |
SOT669 |
Channel FET logic level TrenchMOS |
| PH20100S |
NXP |
10+ |
SOT669 |
Channel FET logic level TrenchMOS |
| PH2525L |
NXP |
10+ |
SOT669 |
Channel FET logic level TrenchMOS |
| PH4025L |
NXP |
10+ |
SOT669 |
Channel FET logic level TrenchMOS |
| PH5525L |
NXP |
10+ |
SOT669 |
Channel FET logic level TrenchMOS |
| PH6325L |
NXP |
10+ |
SOT-669 |
N-channel FET logic level TrenchMOS |
| PH955L |
NXP |
09+ |
SOT669 |
Channel FET logic level TrenchMOS |
| PH9025L |
NXP |
0927+ |
SOT-669 |
N-channel TrenchMOS logic level FET - Configuration: Single N-channel ; ID DC: 66 A; Qgd (typ): 2.7 nC; RDS(on): 13@4.5 V 9@10 V mOhm; VDSmax: 25.0 V; |
| PMV65XP |
NXP |
11+ |
SOT-23-3 |
P-channel TrenchMOS(tm) extremely low level FET - Configuration: Single P-channel; ID DC: 3.9 A; Qgd (typ): 0.65 nC; RDS(on): 76@4.5 |
| 2N7002E |
NXP |
11+ |
SOT-23 |
N-channel Enhanced FET N-channel TrenchMOS FET - Configuration: Single N-channel; ID DC: 0.3 A; RDS(on): 4400@10V5300@4.5V mOhm; VDSmax: 60 V |
| 2N7002K |
NXP |
11+ |
SOT-23 |
N-channel Enhanced FET N-channel TrenchMOS FET - Configuration: Single N-channel; ID DC: 0.3 A; RDS(on): 4400@10V5300@4.5V mOhm; VDSmax: 60 V |
| BSN20 |
NXP |
11+ |
SOT-23 |
N-channel enhancement mode field-effect transistor - Configuration: Single N-channel; ID DC: 0.173 A; RDS(on): 15000@10V20000@5V mOhm; |
| PMBF170 |
NXP |
11+ |
SOT-23 |
N-Channel Enhanced FET Standalone 750mA Li-Ion Battery Charger in 2 x 2 DFN; Package: DFN; No of Pins: 6; Temperature Range: -40°C to +125°C |
| PMN50XP |
NXP |
10+PB |
SOT23-6 |
P-channel TrenchMOS very low horizontal FET |
| BC847C |
NXP |
10+ |
SOT-23 |
diode |
| SI2304DS |
NXP |
11+ |
SOT23-3 |
N-channel enhanced field-effect transistor N-channel enhancement mode field-effect transistor - Configuration: Single N-channel; ID DC: 1.7 A; Qgd (typ): 1.35 nC; RDS(on): 117@10V1 |