home page > Products > 场效应管
PH4830L
Product images are for reference only Request product details

PH4830L

  • 所属类别:场效应管
  • 产品名称:沟道场效应晶体管逻辑电平TrenchMOS
  • 厂商:NXP
  • 生产批号:10+
  • 封装:SOT669
  • 库存状态:有库存
  • 库存量:9000
  • 最低订购量:1
  • 详细资料:点击查找PH4830L的pdf资料
  • 点击询价
联系我们在线客服1 在线客服2 点击发送邮件
  • Product Introduction

PH4830L N-channel N-channel TrenchMOS logic level FET - Configuration: Single N-channel ; ID DC: 84 A; Qgd (typ): 5.4 nC; RDS(on): 7@4.5 V 4.8@10 V mOhm; VDSmax: 30 V

ICs related to PH4830L include:


Model Manufacturers lot number encapsulation illustrate
PH4830L,115 NXP 10+ Standardpac N-channel TrenchMOS logic level FET - Configuration: Single N-channel ; ID DC: 84 A; Qgd (typ): 5.4 nC; RDS(on): 7@4.5 V 4.8@10 V mOhm; VDSmax: 30 V
PH4830L NXP 10+ SOT669 TrenchMOS for channel field effect transistor logic level

Popular searches


Model Manufacturers lot number encapsulation illustrate
NLS-N-BK-C70-M40BEPN250 ITT 24+ connector NLS-N-BK-C70-M40B EPN250
V93BR Mors Smitt 24+ connector V93BR socket - screw terminals, rail mount 8 poles
V17-D MORSSMITT 24+ Relays The relay socket has spring terminals
VGE1TS181900L SOURIAU-SUNBANK 24+ connector Circular MIL Spec Backshells BACKSHELL SZ18
KEYSTONE26 Keystone Electronics 24+ connector EYELET 0.187" BRASS TIN PLATED
KPSE06E14-19SA206 ITT 24+ connector Conn Circular SKT 19 POS Crimp ST Cable Mount 19 Terminal 1 Port
KPSE06J14-19P ITT 24+ connector Circular MIL Spec Connector KPSE 19C 19#20 PIN PLUG
W-1-005-4STUD T&M 24+ DIP SERIES W - Stud Input - 4 Stud Type
ABBH2214SDAM AB Connectors 2024+ connector Connector tailpipe
C193A/24EV-U1 Schaltebao 25+ DIP Voltage 1100v electric current 50A contactor/advantage channel fast delivery
C195A/24EC-U2 Schaltebao 25+ DIP Contactor/Advantage channel fast delivery
D-U204-E Mors Smitt 24+ DIP Instantaneous relays
PW620-18d/2S/R/KS135 FSG 24+ DIP Stellungsferngeber position sensor potentiometer
ST1-DC12V-F Panasonic Electronic Components 24+ DIP Power Relay 12VDC 5DC/8AAC SPST-NO/SPST-NC(31mm 14mm 11.3mm) THT
MER1S1505SC Murata Power Solutions 24+ DIP DC DC CONVERTER 5V 1W
P783-Q24-S5-S CUI Inc 24+ DIP DC DC CONVERTER 5V 15W
9001-18321C00A Oupiin 24+ connector DIN41612 Half R Female 48 Pin
9001-18481C00A Oupiin 24+ connector DIN41612 Half R Female 48 Pin
CIR013106T01031819SCNP0406 ITT Interconnect Solutions 2023+ connector Standard Circular Connector
CIR013106T01031819SCYP0406 ITT Interconnect Solutions 24+ connector Standard Circular Connector

NXP brand product recommendation


Model Manufacturers lot number encapsulation illustrate
PH4330L NXP 10+ SOT669 TrenchMOS for channel field effect transistor logic level
PSMN4R0-30YL NXP 10+ SOT669 TrenchMOS for channel field effect transistor logic level
PH3830L NXP 10+ SOT669 TrenchMOS for channel field effect transistor logic level
PSMN3R5-30YL NXP 10+ SOT669 TrenchMOS for channel field effect transistor logic level
PH3330L NXP 10+ SOT669 TrenchMOS for channel field effect transistor logic level
PSMN059-150Y NXP 10+ SOT669 TrenchMOS for channel field effect transistor logic level
PH20100S NXP 10+ SOT669 TrenchMOS for channel field effect transistor logic level
PH2525L NXP 10+ SOT669 TrenchMOS for channel field effect transistor logic level
PH4025L NXP 10+ SOT669 TrenchMOS for channel field effect transistor logic level
PH5525L NXP 10+ SOT669 TrenchMOS for channel field effect transistor logic level
PH6325L NXP 10+ SOT-669 N-channel tract field effect transistor logic level TrenchMOS
PH955L NXP 09+ SOT669 TrenchMOS for channel field effect transistor logic level
PH9025L NXP 0927+ SOT-669 N-channel TrenchMOS logic level FET - Configuration: Single N-channel ; ID DC: 66 A; Qgd (typ): 2.7 nC; RDS(on): 13@4.5 V 9@10 V mOhm; VDSmax: 25.0 V;
PMV65XP NXP 11+ SOT-23-3 P-channel TrenchMOS(tm) extremely low level FET - Configuration: Single P-channel ; ID DC: 3.9 A; Qgd (typ): 0.65 nC; RDS(on): 76@4.5
2N7002E NXP 11+ SOT-23 N-channel TrenchMOS FET - Configuration: Single N-channel ; ID DC: 0.3 A; RDS(on): 4400@10V5300@4.5V mOhm; VDSmax: 60 V
2N7002K NXP 11+ SOT-23 N-channel TrenchMOS FET - Configuration: Single N-channel ; ID DC: 0.3 A; RDS(on): 4400@10V5300@4.5V mOhm; VDSmax: 60 V
BSN20 NXP 11+ SOT-23 N-channel enhancement mode field-effect transistor - Configuration: Single N-channel ; ID DC: 0.173 A; RDS(on): 15000@10V20000@5V mOhm;
PMBF170 NXP 11+ SOT-23 N-channel enhanced FET Standalone 750mA Li-Ion Battery Charger in 2 x 2 DFN; Package: DFN; No of Pins: 6; Temperature Range: -40°C to +125°C
PMN50XP NXP 10+PB SOT23-6 P-channel TrenchMOS very low horizontal FETs
BC847C NXP 10+ SOT-23 diode

Taxonomic search