PH5525L
Product images are for illustrative purposes only
Product details are welcome upon request

PH5525L

  • Category:FETs
  • Product Name:Channel FET logic level TrenchMOS
  • Manufacturers:NXP
  • Production Batch Number:10+
  • Encapsulation:SOT669
  • Stock Status:There is stock
  • Stock Quantity:9000
  • Minimum order quantity: 1
  • Details:Click here to find PDF information on the PH5525L
  • Click Request a quote
Contact usOnline customer service1 Online customer service2 Click Send email
  • Product introduction

PH5525L Channel FET logic level TrenchMOSN-channel TrenchMOS logic level FET - Configuration: Single N-channel ; ID DC: 81.7 A; Qgd (typ): 3.3 nC; RDS(on): 8.2@4.5 V 5.5@10 V mOhm; VDSmax: 25.0 V

andPH5525LRelated ICs are:


Model Manufacturers lot number encapsulation illustrate
PH5525L NXP 10+ SOT669 Channel FET logic level TrenchMOS

Popular searches


Model Manufacturers lot number encapsulation illustrate
PW70d(2x10432Ω/83°) FSG 2023+ potentiometer PW70D(2*1043Ω 1%/83°)(1700Z04-257.106)
PW70d FSG 2023+ potentiometer PW70D(2*1043Ω 1%/83°)(1700Z04-257.106)
S34ML16G202BHI000 Flip Electronics 2051+ 63BGA 16 Gb, 3 V, 4-bit ECC, x8 I/O, SLC NAND Flash Memory for Embedded
FRCIR06RGG18-20S-F80-V0-M20-1.5F ITTVEAM 2023+ connector Connectors, Circular Connectors, Circular Plugs & Receptacles
CL1215-02P72ET-U2 Schaltbau 2023+ Contactors CL1215/02 P 72ET-U2 1, 2 and 3 pole AC and DC NO contactors for voltages up to 1,500 V
CL1115-02P72ET-U2 Schaltbau 2023+ Contactors 1, 2 and 3 pole AC and DC NO contactors for voltages up to 1,500 V
D-U204N-KLGQ Mors Smitt 2023+ Relays No magnetic arc blow-out
D-U204N-KLCQ Mors Smitt 2023+ Relays No magnetic arc blow-out
MIP30F00830-S1048 Amphenol Positronic 2023+ connector MIP series connectors
C163C/110EV-R1 Schaltebao 2023+ Contactors Contactors
F670-H4V-XUU LEACH 2023+ Relays F670-H4V-XUU+SHKE470-110-AD
F670-H4VP-XUXU LEACH 2023+ Relays F670-H4VP-XUXU+SFE670-1-1
AZ16-12ZI-B1-1747-M20 SCHMERSAL 2023+ switch Safety switches
RX2025GE1 Surio 2023+ connector Extract, Remove, and Insert Tools Contact extraction tool #16
5106.021.09.24 Surio 2023+ connector Extract, remove, and insert tools Extract tool with pop-up
ABMPSE06T28M4SV0N AB Connectors 2023+ connector Plug with RFI Ground
ABMPSE06T36M2SV0N AB Connectors 2023+ connector Plug with RFI Ground
ABMP18T28M13SV0N AB Connectors 2023+ connector RAIL AND MILITARY LAND SYSTEMS
ABCIRHSE06JE1812SCNF80M32V0 AB Connectors 2023+ connector Halogen Free Bayonet Lock Connector Series
TSW-101-06-LM-D samtec 2023+ connector Classic PCB Header Strips, 0.100" pitch

NXP brand product recommendation


Model Manufacturers lot number encapsulation illustrate
PH6325L NXP 10+ SOT-669 N-channel FET logic level TrenchMOS
PH955L NXP 09+ SOT669 Channel FET logic level TrenchMOS
PH9025L NXP 0927+ SOT-669 N-channel TrenchMOS logic level FET - Configuration: Single N-channel ; ID DC: 66 A; Qgd (typ): 2.7 nC; RDS(on): 13@4.5 V 9@10 V mOhm; VDSmax: 25.0 V;
PMV65XP NXP 11+ SOT-23-3 P-channel TrenchMOS(tm) extremely low level FET - Configuration: Single P-channel; ID DC: 3.9 A; Qgd (typ): 0.65 nC; RDS(on): 76@4.5
2N7002E NXP 11+ SOT-23 N-channel Enhanced FET N-channel TrenchMOS FET - Configuration: Single N-channel; ID DC: 0.3 A; RDS(on): 4400@10V5300@4.5V mOhm; VDSmax: 60 V
2N7002K NXP 11+ SOT-23 N-channel Enhanced FET N-channel TrenchMOS FET - Configuration: Single N-channel; ID DC: 0.3 A; RDS(on): 4400@10V5300@4.5V mOhm; VDSmax: 60 V
BSN20 NXP 11+ SOT-23 N-channel enhancement mode field-effect transistor - Configuration: Single N-channel; ID DC: 0.173 A; RDS(on): 15000@10V20000@5V mOhm;
PMBF170 NXP 11+ SOT-23 N-Channel Enhanced FET Standalone 750mA Li-Ion Battery Charger in 2 x 2 DFN; Package: DFN; No of Pins: 6; Temperature Range: -40°C to +125°C
PMN50XP NXP 10+PB SOT23-6 P-channel TrenchMOS very low horizontal FET
BC847C NXP 10+ SOT-23 diode
SI2304DS NXP 11+ SOT23-3 N-channel enhanced field-effect transistor N-channel enhancement mode field-effect transistor - Configuration: Single N-channel; ID DC: 1.7 A; Qgd (typ): 1.35 nC; RDS(on): 117@10V1
PMV117EN NXP 11+ SOT23-3 30 V uTrenchMOS enhanced FET logic level micro TrenchMOS(tm) enhanced logic level FET - Configuration: Single N-channel; ID DC: 2.5 A; Qgd (typ): 1.35 nC; RDS(
BSH108 NXP 11+ SOT23-3 30 V N-channel enhanced FET N-channel enhancement mode field-effect transistor - Configuration: Single N-channel; ID DC: 1.9 A; Qgd (typ): 1.3 nC; RDS(on): 1
BSH114 NXP 11+ SOT23-3 N-channel enhanced field-effect transistor N-channel enhancement mode field effect transistor - Configuration: Single N-channel; ID DC: 0.85 A; Qgd (typ): 2.1 nC; RDS(on): 500@10V
PMV213SN NXP 11+ SOT23-3 100 V N-channel Enhanced Logic Level FET - Configuration: Single N-channel ID
PMV45EN NXP 11+ SOT23-3 Enhanced Logic Level FET - Configuration: Single N-channel ID Kuta: A;; QGD (typing 5.4): 1.9 CNC; relational database (in); VDSmax mOhm: 42@10V54@4.5V: 30 volts; Packing: SOT23 (TO-236AB tape volume); Container: SMD
UDA1341TS NXP 1041+ SSOP Economy audio CODEC for MiniDisc (MD) home stereo and portable applications
BT131-800E NXP 10+ TO-92 Triacs logic level - IGT: 5 mA; IT (RMS): 1 A; VDRM: 800 V; Package: SOT54 (TO-92); Container: Reel pack axial radial
BT131-800D NXP 10+ TO-92 Triacs logic level - IGT: 5 mA; IT (RMS): 1 A; VDRM: 800 V; Package: SOT54 (TO-92); Container: Reel pack axial radial
74HC245D NXP 06+ SOP20  

Categorical search