Model |
Manufacturers |
lot number |
encapsulation |
illustrate |
PH4530L |
NXP |
10+ |
SOT-66 |
TrenchMOS for channel field effect transistor logic level |
PH5330E |
NXP |
10+ |
SOT669 |
TrenchMOS for channel field effect transistor logic level |
PSMN3R0-30YL |
NXP |
10+ |
SOT669 |
TrenchMOS for channel field effect transistor logic level |
PSMN2R5-30YL |
NXP |
10+ |
SOT669 |
TrenchMOS for channel field effect transistor logic level |
PSMN2R0-30YL |
NXP |
10+ |
SOT669 |
TrenchMOS for channel field effect transistor logic level |
PSMN5R0-30YL |
NXP |
10+ |
SOT669 |
TrenchMOS for channel field effect transistor logic level |
PH4830L |
NXP |
10+ |
SOT669 |
TrenchMOS for channel field effect transistor logic level |
PH4330L |
NXP |
10+ |
SOT669 |
TrenchMOS for channel field effect transistor logic level |
PSMN4R0-30YL |
NXP |
10+ |
SOT669 |
TrenchMOS for channel field effect transistor logic level |
PH3830L |
NXP |
10+ |
SOT669 |
TrenchMOS for channel field effect transistor logic level |
PSMN3R5-30YL |
NXP |
10+ |
SOT669 |
TrenchMOS for channel field effect transistor logic level |
PH3330L |
NXP |
10+ |
SOT669 |
TrenchMOS for channel field effect transistor logic level |
PSMN059-150Y |
NXP |
10+ |
SOT669 |
TrenchMOS for channel field effect transistor logic level |
PH20100S |
NXP |
10+ |
SOT669 |
TrenchMOS for channel field effect transistor logic level |
PH2525L |
NXP |
10+ |
SOT669 |
TrenchMOS for channel field effect transistor logic level |
PH4025L |
NXP |
10+ |
SOT669 |
TrenchMOS for channel field effect transistor logic level |
PH5525L |
NXP |
10+ |
SOT669 |
TrenchMOS for channel field effect transistor logic level |
PH6325L |
NXP |
10+ |
SOT-669 |
N-channel tract field effect transistor logic level TrenchMOS |
PH955L |
NXP |
09+ |
SOT669 |
TrenchMOS for channel field effect transistor logic level |
PH9025L |
NXP |
0927+ |
SOT-669 |
N-channel TrenchMOS logic level FET - Configuration: Single N-channel ; ID DC: 66 A; Qgd (typ): 2.7 nC; RDS(on): 13@4.5 V 9@10 V mOhm; VDSmax: 25.0 V; |