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PSMN035-150P
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PSMN035-150P

  • Category:FETs
  • Product Name:N-channel transistor TrenchMO N-channel enhancement mode field-effect transistor - Configuration: Single N-channel; ID DC: 50 A; Qgd (typ): 33 nC; RDS(on): 35@10V
  • Manufacturers:NXP
  • Production Batch Number:10+
  • Encapsulation:TO-220
  • Stock Status:There is stock
  • Stock Quantity:9000
  • Minimum order quantity: 1
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  • Product introduction

PSMN035-150PN-channel transistor TrenchMON-channel enhancement mode field-effect transistor - Configuration: Single N-channel ; ID DC: 50 A; Qgd (typ): 33 nC; RDS(on): 35@10V mOhm; VDSmax: 150 V

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PSMN004-55W NXP 10+ TO-247 N-channel logic level TrenchMOS (tm) transistor - Configuration: Single N-channel; ID DC: 100 A; Qgd (typ): 106 nC; RDS(on): 4.2@
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PSMN057-200P NXP 10+ SOT78/TO-220 N-channel Enhanced FET N-channel TrenchMOS (tm) transistor - Configuration: Single N-channel; ID DC: 39 A; Qgd (typ): 37 nC; RDS(on): 57@10V mOhm; VDSmax: 200 V
PSMN063-150D NXP 10+ SOT-252 N-channel Enhanced Field Effect Transistor Circular Connector; MIL SPEC:MIL-C-26482, Series I, Solder; Body Material:Aluminum; Series:PT06; Number of Contacts:4; Connector Shell Siz
PSMN070-200B NXP 10+ TO-263 N-channel transistor TrenchMOS Circular Connector; Body Material:Aluminum; Series:PT07; Number of Contacts:41; Connector Shell Size:20; Connecting Termination:Cri
PSMN070-200P NXP 10+ TO-220 N-channel TrenchMOS standard level FET - Configuration: Single N-channel ; ID DC: 21.5 A; Qgd (typ): 10.1 nC; RDS(on): 102@10V mOhm; VDSmax: 200 V

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PSMN063-150D NXP 10+ SOT-252 N-channel Enhanced Field Effect Transistor Circular Connector; MIL SPEC:MIL-C-26482, Series I, Solder; Body Material:Aluminum; Series:PT06; Number of Contacts:4; Connector Shell Siz
PSMN070-200B NXP 10+ TO-263 N-channel transistor TrenchMOS Circular Connector; Body Material:Aluminum; Series:PT07; Number of Contacts:41; Connector Shell Size:20; Connecting Termination:Cri
PSMN070-200P NXP 10+ TO-220 N-channel TrenchMOS standard level FET - Configuration: Single N-channel ; ID DC: 21.5 A; Qgd (typ): 10.1 nC; RDS(on): 102@10V mOhm; VDSmax: 200 V
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