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PSMN057-200B
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PSMN057-200B

  • 所属类别：场效应管
  • 产品名称：N沟道增强型场效应晶体管N-channel TrenchMOS (tm) transistor - Configuration: Single N-channel ; ID DC: 39 A; Qgd (typ): 37 nC; RDS(on): 57@10V mOhm; VDSmax: 200 V
  • 厂商：NXP
  • 生产批号：10+
  • 封装：TO-263
  • 库存状态：有库存
  • 库存量：9000
  • 最低订购量：1
  • 详细资料：点击查找PSMN057-200B的pdf资料
  • 点击询价
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  • Product Introduction

PSMN057-200B  N-channel TrenchMOS (tm) transistor - Configuration: Single N-channel ; ID DC: 39 A; Qgd (typ): 37 nC; RDS(on): 57@10V mOhm; VDSmax: 200 V

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