| Model | Manufacturers | lot number | encapsulation | illustrate | 
| PSMN070-200B | NXP | 10+ | TO-263 | N-channel transistor TrenchMOS Circular Connector; Body Material:Aluminum; Series:PT07; Number of Contacts:41; Connector Shell Size:20; Connecting Termination:Cri | 
| PSMN070-200P | NXP | 10+ | TO-220 | N-channel TrenchMOS standard level FET - Configuration: Single N-channel ; ID DC: 21.5 A; Qgd (typ): 10.1 nC; RDS(on): 102@10V mOhm; VDSmax: 200 V | 
| PSMN102-200Y | NXP | 10+ | SOT-669 | N-channel TrenchMOS standard level FET - Configuration: Single N-channel ; ID DC: 21.5 A; Qgd (typ): 10.1 nC; RDS(on): 102@10V mOhm; VDSmax: 200 V | 
| PSMN130-200D | NXP | 10+ | SOT-252 | N-channel TrenchMOS transistor | 
| PSMN1R7-30YL | NXP | 10+ | SOT-669 | N-channel Trenchmos (tm) enhanced logic level FET - Configuration: Single N-channel ; ID DC: 67 A; RDS(on): 8.2@10V13@4.5V mOhm; VDSmax: 3 | 
| PH9930L | NXP | 10+ | SOT-669 | N-channel Trenchmos (tm) enhanced logic level FET - Configuration: Single N-channel ; ID DC: 67 A; RDS(on): 8.2@10V13@4.5V mOhm; VDSmax: 3 | 
| PH8230E | NXP | 10+ | SOT-669 | N-channel Trenchmos (tm) enhanced logic level FET - Configuration: Single N-channel ; ID DC: 67 A; RDS(on): 8.2@10V13@4.5V mOhm; VDSmax: 3 | 
| PH7030L | NXP | 10+ | SOT-669 | Trenchmos (tm) enhanced logic level FET - Configuration: Single N-channel ; ID DC: 80 A; Qgd (typ): 6 nC; RDS(on): 5.7@10V8.5@4.5V mOhm; V | 
| PSMN7R0-30YL | NXP | 10+ | SOT-669 | Trenchmos (tm) enhanced logic level FET - Configuration: Single N-channel ; ID DC: 80 A; Qgd (typ): 6 nC; RDS(on): 5.7@10V8.5@4.5V mOhm; V | 
| PH6030L | NXP | 10+ | SOT-669 | Trenchmos (tm) enhanced logic level FET - Configuration: Single N-channel ; ID DC: 80 A; Qgd (typ): 6 nC; RDS(on): 5.7@10V8.5@4.5V mOhm; V | 
| PSMN6R0-30YL | NXP | 10+ | SOT-669 | Trenchmos (tm) enhanced logic level FET - Configuration: Single N-channel ; ID DC: 80 A; Qgd (typ): 6 nC; RDS(on): 5.7@10V8.5@4.5V mOhm; V | 
| PH8030L | NXP | 10+ | SOT669 | TrenchMOS for channel field effect transistor logic level | 
| PH4530L | NXP | 10+ | SOT-66 | TrenchMOS for channel field effect transistor logic level | 
| PH5330E | NXP | 10+ | SOT669 | TrenchMOS for channel field effect transistor logic level | 
| PSMN3R0-30YL | NXP | 10+ | SOT669 | TrenchMOS for channel field effect transistor logic level | 
| PSMN2R5-30YL | NXP | 10+ | SOT669 | TrenchMOS for channel field effect transistor logic level | 
| PSMN2R0-30YL | NXP | 10+ | SOT669 | TrenchMOS for channel field effect transistor logic level | 
| PSMN5R0-30YL | NXP | 10+ | SOT669 | TrenchMOS for channel field effect transistor logic level | 
| PH4830L | NXP | 10+ | SOT669 | TrenchMOS for channel field effect transistor logic level | 
| PH4330L | NXP | 10+ | SOT669 | TrenchMOS for channel field effect transistor logic level |