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PSMN063-150D
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PSMN063-150D

  • Category:FETs
  • Product Name:N-channel Enhanced Field Effect Transistor Circular Connector; MIL SPEC:MIL-C-26482, Series I, Solder; Body Material:Aluminum; Series:PT06; Number of Contacts:4; Connector Shell Siz
  • Manufacturers:NXP
  • Production Batch Number:10+
  • Encapsulation:SOT-252
  • Stock Status:There is stock
  • Stock Quantity:9000
  • Minimum order quantity: 1
  • Details:点击查找PSMN063-150D的pdf资料
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  • Product introduction

PSMN063-150DN-channel enhanced field-effect transistorCircular Connector; MIL SPEC:MIL-C-26482, Series I, Solder; Body Material:Aluminum; Series:PT06; Number of Contacts:4; Connector Shell Size:8; Connecting Termination:Solder; Circular Shell Style:Straight Plug; Body Style:Straight

andPSMN063-150DRelated ICs are:


Model Manufacturers lot number encapsulation illustrate
PSMN005-75B NXP 10+ TO-263-3 N-channel transistor TrenchMOS Circular Connector; Body Material:Aluminum Alloy; Series:MS3111; Number of Contacts:10; Connector Shell Size:12; Connecting Termi
PSMN009-100W NXP 10+ TO-247 N-channel transistor TrenchMOS Circular Connector; Body Material:Aluminum Alloy; Series:MS3111; Number of Contacts:10; Connector Shell Size:12; Connecting Termi
PSMN035-150P NXP 10+ TO-220 N-channel transistor TrenchMO N-channel enhancement mode field-effect transistor - Configuration: Single N-channel; ID DC: 50 A; Qgd (typ): 33 nC; RDS(on): 35@10V
PSMN057-200B NXP 10+ TO-263 N-channel Enhanced FET N-channel TrenchMOS (tm) transistor - Configuration: Single N-channel; ID DC: 39 A; Qgd (typ): 37 nC; RDS(on): 57@10V mOhm; VDSmax: 200 V
PSMN057-200P NXP 10+ SOT78/TO-220 N-channel Enhanced FET N-channel TrenchMOS (tm) transistor - Configuration: Single N-channel; ID DC: 39 A; Qgd (typ): 37 nC; RDS(on): 57@10V mOhm; VDSmax: 200 V
PSMN070-200B NXP 10+ TO-263 N-channel transistor TrenchMOS Circular Connector; Body Material:Aluminum; Series:PT07; Number of Contacts:41; Connector Shell Size:20; Connecting Termination:Cri
PSMN070-200P NXP 10+ TO-220 N-channel TrenchMOS standard level FET - Configuration: Single N-channel ; ID DC: 21.5 A; Qgd (typ): 10.1 nC; RDS(on): 102@10V mOhm; VDSmax: 200 V
PSMN102-200Y NXP 10+ SOT-669 N-channel TrenchMOS standard level FET - Configuration: Single N-channel ; ID DC: 21.5 A; Qgd (typ): 10.1 nC; RDS(on): 102@10V mOhm; VDSmax: 200 V
PSMN130-200D NXP 10+ SOT-252 N-channel TrenchMOS transistor
PSMN1R7-30YL NXP 10+ SOT-669 N-channel Trenchmos (tm) enhanced logic level FET - Configuration: Single N-channel; ID DC: 67 A; RDS(on): 8.2@10V13@4.5V mOhm; VDSmax: 3

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Model Manufacturers lot number encapsulation illustrate
PSMN070-200B NXP 10+ TO-263 N-channel transistor TrenchMOS Circular Connector; Body Material:Aluminum; Series:PT07; Number of Contacts:41; Connector Shell Size:20; Connecting Termination:Cri
PSMN070-200P NXP 10+ TO-220 N-channel TrenchMOS standard level FET - Configuration: Single N-channel ; ID DC: 21.5 A; Qgd (typ): 10.1 nC; RDS(on): 102@10V mOhm; VDSmax: 200 V
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PH8230E NXP 10+ SOT-669 N-channel Trenchmos (tm) enhanced logic level FET - Configuration: Single N-channel; ID DC: 67 A; RDS(on): 8.2@10V13@4.5V mOhm; VDSmax: 3
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