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PSMN070-200B
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PSMN070-200B

  • 所属类别：场效应管
  • 产品名称：N沟道晶体管TrenchMOS Circular Connector; Body Material:Aluminum; Series:PT07; Number of Contacts:41; Connector Shell Size:20; Connecting Termination:Cri
  • 厂商：NXP
  • 生产批号：10+
  • 封装：TO-263
  • 库存状态：有库存
  • 库存量：9000
  • 最低订购量：1
  • 详细资料：点击查找PSMN070-200B的pdf资料
  • 点击询价
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  • Product Introduction

PSMN070-200B  N-channel transistor TrenchMOS   Circular Connector; Body Material:Aluminum; Series:PT07; Number of Contacts:41; Connector Shell Size:20; Connecting Termination:Crimp; Circular Shell Style:Jam Nut Receptacle; Circular Contact Gender:Socket; Insert Arrangement:20-41

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PSMN009-100W NXP 10+ TO-247 N-channel transistor TrenchMOS Circular Connector; Body Material:Aluminum Alloy; Series:MS3111; Number of Contacts:10; Connector Shell Size:12; Connecting Termi
PSMN035-150P NXP 10+ TO-220 N-channel transistor TrenchMO N-channel enhancement mode field-effect transistor - Configuration: Single N-channel ; ID DC: 50 A; Qgd (typ): 33 nC; RDS(on): 35@10V
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PSMN063-150D NXP 10+ SOT-252 N-channel enhanced field-effect transistor Circular Connector; MIL SPEC:MIL-C-26482, Series I, Solder; Body Material:Aluminum; Series:PT06; Number of Contacts:4; Connector Shell Siz
PSMN070-200P NXP 10+ TO-220 N-channel TrenchMOS standard level FET - Configuration: Single N-channel ; ID DC: 21.5 A; Qgd (typ): 10.1 nC; RDS(on): 102@10V mOhm; VDSmax: 200 V
PSMN102-200Y NXP 10+ SOT-669 N-channel TrenchMOS standard level FET - Configuration: Single N-channel ; ID DC: 21.5 A; Qgd (typ): 10.1 nC; RDS(on): 102@10V mOhm; VDSmax: 200 V
PSMN130-200D NXP 10+ SOT-252 N-channel TrenchMOS transistor
PSMN1R7-30YL NXP 10+ SOT-669 N-channel Trenchmos (tm) enhanced logic level FET - Configuration: Single N-channel ; ID DC: 67 A; RDS(on): 8.2@10V13@4.5V mOhm; VDSmax: 3
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