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PSMN070-200P
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PSMN070-200P

  • Category:FETs
  • Product Name:N-channel TrenchMOS standard level FET - Configuration: Single N-channel ; ID DC: 21.5 A; Qgd (typ): 10.1 nC; RDS(on): 102@10V mOhm; VDSmax: 200 V
  • Manufacturers:NXP
  • Production Batch Number:10+
  • Encapsulation:TO-220
  • Stock Status:There is stock
  • Stock Quantity:9000
  • Minimum order quantity: 1
  • Details:Click here to find pdf information on PSMN070-200P
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  • Product introduction

PSMN070-200PN-channel transistor TrenchMOSN-channel TrenchMOS (tm) transistor - Configuration: Single N-channel ; ID DC: 35 A; Qgd (typ): 28 nC; RDS(on): 70@10V mOhm; VDSmax: 200 V

andPSMN070-200PRelated ICs are:


Model Manufacturers lot number encapsulation illustrate
PSMN035-150P NXP 10+ TO-220 N-channel transistor TrenchMO N-channel enhancement mode field-effect transistor - Configuration: Single N-channel; ID DC: 50 A; Qgd (typ): 33 nC; RDS(on): 35@10V
PSMN057-200B NXP 10+ TO-263 N-channel Enhanced FET N-channel TrenchMOS (tm) transistor - Configuration: Single N-channel; ID DC: 39 A; Qgd (typ): 37 nC; RDS(on): 57@10V mOhm; VDSmax: 200 V
PSMN057-200P NXP 10+ SOT78/TO-220 N-channel Enhanced FET N-channel TrenchMOS (tm) transistor - Configuration: Single N-channel; ID DC: 39 A; Qgd (typ): 37 nC; RDS(on): 57@10V mOhm; VDSmax: 200 V
PSMN063-150D NXP 10+ SOT-252 N-channel Enhanced Field Effect Transistor Circular Connector; MIL SPEC:MIL-C-26482, Series I, Solder; Body Material:Aluminum; Series:PT06; Number of Contacts:4; Connector Shell Siz
PSMN070-200B NXP 10+ TO-263 N-channel transistor TrenchMOS Circular Connector; Body Material:Aluminum; Series:PT07; Number of Contacts:41; Connector Shell Size:20; Connecting Termination:Cri
PSMN102-200Y NXP 10+ SOT-669 N-channel TrenchMOS standard level FET - Configuration: Single N-channel ; ID DC: 21.5 A; Qgd (typ): 10.1 nC; RDS(on): 102@10V mOhm; VDSmax: 200 V
PSMN130-200D NXP 10+ SOT-252 N-channel TrenchMOS transistor
PSMN1R7-30YL NXP 10+ SOT-669 N-channel Trenchmos (tm) enhanced logic level FET - Configuration: Single N-channel; ID DC: 67 A; RDS(on): 8.2@10V13@4.5V mOhm; VDSmax: 3
THS4271-EP TI 10+ 8MSOP-PowerPAD Enhanced product, low noise, high slew rate, unity gain, stable voltage feedback amplifier
THS4271 TI 10+ 8MSOP, 8MSOP-PowerPAD, 8SOIC, 8SON Ultra-fast, ultra-low distortion high speed amplifier

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NXP brand product recommendation


Model Manufacturers lot number encapsulation illustrate
PSMN102-200Y NXP 10+ SOT-669 N-channel TrenchMOS standard level FET - Configuration: Single N-channel ; ID DC: 21.5 A; Qgd (typ): 10.1 nC; RDS(on): 102@10V mOhm; VDSmax: 200 V
PSMN130-200D NXP 10+ SOT-252 N-channel TrenchMOS transistor
PSMN1R7-30YL NXP 10+ SOT-669 N-channel Trenchmos (tm) enhanced logic level FET - Configuration: Single N-channel; ID DC: 67 A; RDS(on): 8.2@10V13@4.5V mOhm; VDSmax: 3
PH9930L NXP 10+ SOT-669 N-channel Trenchmos (tm) enhanced logic level FET - Configuration: Single N-channel; ID DC: 67 A; RDS(on): 8.2@10V13@4.5V mOhm; VDSmax: 3
PH8230E NXP 10+ SOT-669 N-channel Trenchmos (tm) enhanced logic level FET - Configuration: Single N-channel; ID DC: 67 A; RDS(on): 8.2@10V13@4.5V mOhm; VDSmax: 3
PH7030L NXP 10+ SOT-669 Channel FET logic level Trenchmos (tm) enhanced logic level FET - Configuration: Single N-channel; ID DC: 80 A; Qgd (typ): 6 nC; RDS(on): 5.7@10V8.5@4.5V mOhm; V
PSMN7R0-30YL NXP 10+ SOT-669 Channel FET logic level Trenchmos (tm) enhanced logic level FET - Configuration: Single N-channel; ID DC: 80 A; Qgd (typ): 6 nC; RDS(on): 5.7@10V8.5@4.5V mOhm; V
PH6030L NXP 10+ SOT-669 Channel FET logic level Trenchmos (tm) enhanced logic level FET - Configuration: Single N-channel; ID DC: 80 A; Qgd (typ): 6 nC; RDS(on): 5.7@10V8.5@4.5V mOhm; V
PSMN6R0-30YL NXP 10+ SOT-669 Channel FET logic level Trenchmos (tm) enhanced logic level FET - Configuration: Single N-channel; ID DC: 80 A; Qgd (typ): 6 nC; RDS(on): 5.7@10V8.5@4.5V mOhm; V
PH8030L NXP 10+ SOT669 Channel FET logic level TrenchMOS
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