Model |
Manufacturers |
lot number |
encapsulation |
illustrate |
PSMN2R0-30YL |
NXP |
10+ |
SOT669 |
Channel FET logic level TrenchMOS |
PSMN5R0-30YL |
NXP |
10+ |
SOT669 |
Channel FET logic level TrenchMOS |
PH4830L |
NXP |
10+ |
SOT669 |
Channel FET logic level TrenchMOS |
PH4330L |
NXP |
10+ |
SOT669 |
Channel FET logic level TrenchMOS |
PSMN4R0-30YL |
NXP |
10+ |
SOT669 |
Channel FET logic level TrenchMOS |
PH3830L |
NXP |
10+ |
SOT669 |
Channel FET logic level TrenchMOS |
PSMN3R5-30YL |
NXP |
10+ |
SOT669 |
Channel FET logic level TrenchMOS |
PH3330L |
NXP |
10+ |
SOT669 |
Channel FET logic level TrenchMOS |
PSMN059-150Y |
NXP |
10+ |
SOT669 |
Channel FET logic level TrenchMOS |
PH20100S |
NXP |
10+ |
SOT669 |
Channel FET logic level TrenchMOS |
PH2525L |
NXP |
10+ |
SOT669 |
Channel FET logic level TrenchMOS |
PH4025L |
NXP |
10+ |
SOT669 |
Channel FET logic level TrenchMOS |
PH5525L |
NXP |
10+ |
SOT669 |
Channel FET logic level TrenchMOS |
PH6325L |
NXP |
10+ |
SOT-669 |
N-channel FET logic level TrenchMOS |
PH955L |
NXP |
09+ |
SOT669 |
Channel FET logic level TrenchMOS |
PH9025L |
NXP |
0927+ |
SOT-669 |
N-channel TrenchMOS logic level FET - Configuration: Single N-channel ; ID DC: 66 A; Qgd (typ): 2.7 nC; RDS(on): 13@4.5 V 9@10 V mOhm; VDSmax: 25.0 V; |
PMV65XP |
NXP |
11+ |
SOT-23-3 |
P-channel TrenchMOS(tm) extremely low level FET - Configuration: Single P-channel; ID DC: 3.9 A; Qgd (typ): 0.65 nC; RDS(on): 76@4.5 |
2N7002E |
NXP |
11+ |
SOT-23 |
N-channel Enhanced FET N-channel TrenchMOS FET - Configuration: Single N-channel; ID DC: 0.3 A; RDS(on): 4400@10V5300@4.5V mOhm; VDSmax: 60 V |
2N7002K |
NXP |
11+ |
SOT-23 |
N-channel Enhanced FET N-channel TrenchMOS FET - Configuration: Single N-channel; ID DC: 0.3 A; RDS(on): 4400@10V5300@4.5V mOhm; VDSmax: 60 V |
BSN20 |
NXP |
11+ |
SOT-23 |
N-channel enhancement mode field-effect transistor - Configuration: Single N-channel; ID DC: 0.173 A; RDS(on): 15000@10V20000@5V mOhm; |