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PSMN6R0-30YL
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Category:FETs
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Product Name:Channel FET logic level Trenchmos (tm) enhanced logic level FET - Configuration: Single N-channel; ID DC: 80 A; Qgd (typ): 6 nC; RDS(on): 5.7@10V8.5@4.5V mOhm; V
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Manufacturers:NXP
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Production Batch Number:10+
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Encapsulation:SOT-669
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Stock Status:There is stock
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Stock Quantity:9000
- Minimum order quantity: 1
- Details:
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PSMN6R0-30YL N-沟道场效应晶体管逻辑电平TrenchMOSN-channel TrenchMOS logic level FET, SOT669 (LFPAK), Tape reel SMD
andPSMN6R0-30YLRelated ICs are:
| Model |
Manufacturers |
lot number |
encapsulation |
illustrate |
| PH7030L |
NXP |
10+ |
SOT-669 |
Channel FET logic level Trenchmos (tm) enhanced logic level FET - Configuration: Single N-channel; ID DC: 80 A; Qgd (typ): 6 nC; RDS(on): 5.7@10V8.5@4.5V mOhm; V |
| THS4211 |
TI |
09+ |
8MSOP, 8MSOP-PowerPAD, 8SOIC, 8SON |
Ultra-fast, ultra-low distortion, high speed operational amplifier with shutdown status |
| PSMN7R0-30YL |
NXP |
10+ |
SOT-669 |
Channel FET logic level Trenchmos (tm) enhanced logic level FET - Configuration: Single N-channel; ID DC: 80 A; Qgd (typ): 6 nC; RDS(on): 5.7@10V8.5@4.5V mOhm; V |
| PH6030L |
NXP |
10+ |
SOT-669 |
Channel FET logic level Trenchmos (tm) enhanced logic level FET - Configuration: Single N-channel; ID DC: 80 A; Qgd (typ): 6 nC; RDS(on): 5.7@10V8.5@4.5V mOhm; V |
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|
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