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PSMN6R0-30YL
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PSMN6R0-30YL

  • 所属类别：场效应管
  • 产品名称：沟道场效应晶体管逻辑电平Trenchmos (tm) enhanced logic level FET - Configuration: Single N-channel ; ID DC: 80 A; Qgd (typ): 6 nC; RDS(on): 5.7@10V8.5@4.5V mOhm; V
  • 厂商：NXP
  • 生产批号：10+
  • 封装：SOT-669
  • 库存状态：有库存
  • 库存量：9000
  • 最低订购量：1
  • 详细资料：点击查找PSMN6R0-30YL的pdf资料
  • 点击询价
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  • Product Introduction

PSMN6R0-30YL N-channel Field-Effect Transistor Logic Level TrenchMOS N-channel TrenchMOS logic level FET, SOT669 (LFPAK), Tape reel SMD

The ICs associated with the PSMN6R0-30YL include:


Model Manufacturers lot number encapsulation illustrate
PH7030L NXP 10+ SOT-669 Trenchmos (tm) enhanced logic level FET - Configuration: Single N-channel ; ID DC: 80 A; Qgd (typ): 6 nC; RDS(on): 5.7@10V8.5@4.5V mOhm; V
THS4211 TI 09+ 8MSOP, 8MSOP-PowerPAD, 8SOIC, 8SON Ultra-fast, ultra-low-distortion, high-speed operational amplifier with shutdown state
PSMN7R0-30YL NXP 10+ SOT-669 Trenchmos (tm) enhanced logic level FET - Configuration: Single N-channel ; ID DC: 80 A; Qgd (typ): 6 nC; RDS(on): 5.7@10V8.5@4.5V mOhm; V
PH6030L NXP 10+ SOT-669 Trenchmos (tm) enhanced logic level FET - Configuration: Single N-channel ; ID DC: 80 A; Qgd (typ): 6 nC; RDS(on): 5.7@10V8.5@4.5V mOhm; V
THS4082 TI 08+ 8MSOP-PowerPAD, 8SOIC Dual 175MHz low-power voltage feedback amplifiers
THS4081 TI   8MSOP-PowerPAD, 8SOIC 175 MHz low-power voltage feedback amplifier
THS4062 TI 09+ 8MSOP-PowerPAD, 8SOIC Dual 180MHz high-output drive voltage feedback amplifiers
THS4061M TI 10+ 20LCCC, 8CDIP 180MHz high-speed amplifier
THS4061 TI 10+ 8MSOP-PowerPAD, 8SOIC 180MHz high output drive voltage feedback amplifier
THS4052 TI 09+10+ 8MSOP-PowerPAD, 8SOIC Two 70MHz low-cost voltage feedback amplifiers

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