PSMN7R0-30YL
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PSMN7R0-30YL

  • Category:FETs
  • Product Name:Channel FET logic level Trenchmos (tm) enhanced logic level FET - Configuration: Single N-channel; ID DC: 80 A; Qgd (typ): 6 nC; RDS(on): 5.7@10V8.5@4.5V mOhm; V
  • Manufacturers:NXP
  • Production Batch Number:10+
  • Encapsulation:SOT-669
  • Stock Status:There is stock
  • Stock Quantity:9000
  • Minimum order quantity: 1
  • Details:点击查找PSMN7R0-30YL的pdf资料
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  • Product introduction

PSMN7R0-30YL    N-沟道场效应晶体管逻辑电平TrenchMOSN-channel TrenchMOS logic level FET, SOT669 (LFPAK), Tape reel SMD

andPSMN7R0-30YLRelated ICs are:


Model Manufacturers lot number encapsulation illustrate
THS4221 TI 10+ 5SOT-23, 8MSOP, 8MSOP-PowerPAD, 8SOIC Low distortion high speed rail-to-rail output operational amplifier
THS4215 TI 09+ 8MSOP, 8MSOP-PowerPAD, 8SOIC, 8SON Ultra-fast, ultra-low distortion, high speed operational amplifier with shutdown status
PH8230E NXP 10+ SOT-669 N-channel Trenchmos (tm) enhanced logic level FET - Configuration: Single N-channel; ID DC: 67 A; RDS(on): 8.2@10V13@4.5V mOhm; VDSmax: 3
PH7030L NXP 10+ SOT-669 Channel FET logic level Trenchmos (tm) enhanced logic level FET - Configuration: Single N-channel; ID DC: 80 A; Qgd (typ): 6 nC; RDS(on): 5.7@10V8.5@4.5V mOhm; V
THS4211 TI 09+ 8MSOP, 8MSOP-PowerPAD, 8SOIC, 8SON Ultra-fast, ultra-low distortion, high speed operational amplifier with shutdown status
PH6030L NXP 10+ SOT-669 Channel FET logic level Trenchmos (tm) enhanced logic level FET - Configuration: Single N-channel; ID DC: 80 A; Qgd (typ): 6 nC; RDS(on): 5.7@10V8.5@4.5V mOhm; V
THS4082 TI 08+ 8MSOP-PowerPAD, 8SOIC Dual 175MHz low power voltage feedback amplifiers
PSMN6R0-30YL NXP 10+ SOT-669 Channel FET logic level Trenchmos (tm) enhanced logic level FET - Configuration: Single N-channel; ID DC: 80 A; Qgd (typ): 6 nC; RDS(on): 5.7@10V8.5@4.5V mOhm; V
THS4081 TI   8MSOP-PowerPAD, 8SOIC 175 MHz low power voltage feedback amplifier
THS4062 TI 09+ 8MSOP-PowerPAD, 8SOIC Dual 180MHz high output drive voltage feedback amplifiers

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