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RFD14N05L
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RFD14N05L

  • Category:FETs
  • Product Name:14A, 50V, 0.100 Ohm, Logic Level, N-Channel Power MOSFETs (14A, 50V, 0.100 Ω, Logic Level N-Channel Power MOS FETs)
  • Manufacturers:FAIRCHILD
  • Production Batch Number:2010+
  • Encapsulation:TO-251
  • Stock Status:There is stock
  • Stock Quantity:12000
  • Minimum order quantity: 1
  • Details:点击查找RFD14N05L的pdf资料
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  • Product introduction

RFD14N05L14A, 50V, 0.100 Ohm, Logic Level, N-Channel Power MOSFETs (14A, 50V, 0.100 Ω, Logic Level N-Channel Power MOS FETs)

andRFD14N05LRelated ICs are:


Model Manufacturers lot number encapsulation illustrate
SFP9540 FAIRCHILD 2010+ TO-220 P-Channel Power MOSFET (P-Channel Power MOS FET with drain-to-source voltage of -100V)
RFP70N06 FAIRCHILD 2010+ TO-220 70A, 60V, 0.014 Ohm, N-Channel Power MOSFETs; Package: TO-220; No of Pins: 3; Container: Rail
RFD16N05LSM FAIRCHILD 2010+ TO-252 16A, 50V, 0.047 Ohm, Logic Level, N-Channel Power MOSFETs(16A, 50V, 0.047 Ω N-Channel Power MOS FETs)
RFD14N05LSM9A FAIRCHILD 2010+ TO-252 14A, 50V, 0.100 Ohm, Logic Level, N-Channel Power MOSFETs (14A, 50V, 0.100 Ω, Logic Level N-Channel Power MOS FETs)
RFD14N05LSM FAIRCHILD 2010+ TO-252 14A, 50V, 0.100 Ohm, Logic Level, N-Channel Power MOSFETs (14A, 50V, 0.100 Ω, Logic Level N-Channel Power MOS FETs)
NDT451AN FAIRCHILD 2010+ SOT-223 N-Channel Enhancement Mode Field Effect Transistor (7.2A, 30V, 0.035Ω) (N-Channel Enhanced FET (leakage current 7.2A, drain-source voltage 30V, on-resistance 0.035Ω))
NDS356AP FAIRCHILD 2010+ SOT-23-3 P-Channel Logic Level Enhancement Mode Field Effect Transistor(-1.1A, -30V, 0.3Ω) (P-channel logic enhancement MOS FET (leakage current -1.1A, drain-to-source voltage-30V, on-resistance 0.3Ω))
NDS355AN FAIRCHILD 2010+ SOT-23-3 N-Channel Logic Level Enhancement Mode Field Effect Transistor (1.7A, 30V, 0.125Ω) (N-Channel Logic Enhanced MOS FET (Leakage Current 1.7A, Drain-Source Voltage 30V, On-Resistance 0.125Ω))
NDS352AP FAIRCHILD 2010+ SOT-23-3 P-Channel Logic Level Enhancement Mode Field Effect Transistor(-0.9A, -30V, 0.5Ω) (P-channel logic enhancement MOS FET (leakage current -0.9A, drain-to-source voltage-30V, on-resistance 0.5Ω))
FDN5630_NL FAIRCHILD 2010+ SOT-23 60V N-Channel PowerTrench MOSFET; Package: SuperSOT; No of Pins: 3; Container: Tape & Reel

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FAIRCHILD BRAND PRODUCT RECOMMENDATION


Model Manufacturers lot number encapsulation illustrate
NDT451AN FAIRCHILD 2010+ SOT-223 N-Channel Enhancement Mode Field Effect Transistor (7.2A, 30V, 0.035Ω) (N-Channel Enhanced FET (leakage current 7.2A, drain-source voltage 30V, on-resistance 0.035Ω))
NDS356AP FAIRCHILD 2010+ SOT-23-3 P-Channel Logic Level Enhancement Mode Field Effect Transistor(-1.1A, -30V, 0.3Ω) (P-channel logic enhancement MOS FET (leakage current -1.1A, drain-to-source voltage-30V, on-resistance 0.3Ω))
NDS355AN FAIRCHILD 2010+ SOT-23-3 N-Channel Logic Level Enhancement Mode Field Effect Transistor (1.7A, 30V, 0.125Ω) (N-Channel Logic Enhanced MOS FET (Leakage Current 1.7A, Drain-Source Voltage 30V, On-Resistance 0.125Ω))
NDS352AP FAIRCHILD 2010+ SOT-23-3 P-Channel Logic Level Enhancement Mode Field Effect Transistor(-0.9A, -30V, 0.5Ω) (P-channel logic enhancement MOS FET (leakage current -0.9A, drain-to-source voltage-30V, on-resistance 0.5Ω))
FDN5630_NL FAIRCHILD 2010+ SOT-23 60V N-Channel PowerTrench MOSFET; Package: SuperSOT; No of Pins: 3; Container: Tape & Reel
MTP3055VL FAIRCHILD 2010+ TO-220 N沟道增强模式的逻辑电平场效应晶体管 N-Channel Logic Level Enhancement Mode Field Effect Transistor; Package: TO-220AB; No of Pins: 3; Container: Rail
HUF76407D3ST FAIRCHILD 2010+ TO-252 11A,60V, 0.107 Ohm, N-Channe, Logic Level UltraFET Power MOSFET; Package: TO-252(DPAK); No of Pins: 2; Container: Tape & Reel
HUF75882G3 FAIRCHILD 2010+ TO-220 75A, 100V, 0.008 Ohm, N-Channel UltraFET Power MOSFET (75A, 100V, 0.008Ω N-Channel Logic Level Power MOS FET)
HUF75653G3 FAIRCHILD 2010+ TO-220 75A, 100V, 0.008 Ohm, N-Channel UltraFET Power MOSFET (75A, 100V, 0.008Ω N-Channel Logic Level Power MOS FET)
HUF75545P3 FAIRCHILD 2010+ TO-220 75A, 80V, 0.010 Ohm, N-Channel, UltraFET Power MOSFET (75A, 80V, 0.010Ω N-channel logic level power MOS FET
HUF75339S3ST FAIRCHILD 2010+ TO-263 Power FET
HUF75339S3S FAIRCHILD 2010+ TO-263 75A, 55V, 0.012 Ohm, N-Channel UltraFET Power MOSFETs (75A, 55V, 0.012 Ω, N-Channel UltraFET Power MOS FES)
HUF75339P3 FAIRCHILD 2010+ TO-220 75A, 55V, 0.012 Ohm, N-Channel UltraFET Power MOSFETs (75A, 55V, 0.012 Ω, N-Channel UltraFET Power MOS FES)
HUF75339G3 FAIRCHILD 2010+ TO-247 75A, 55V, 0.012 Ohm, N-Channel UltraFET Power MOSFETs (75A, 55V, 0.012 Ω, N-Channel UltraFET Power MOS FES
HUF75321P3 FAIRCHILD 2010+ TO-220 35A, 55V, 0.034 Ohm, N-Channel UltraFET Power MOSFETs (35A, 55V, 0.034 Ω, N-Channel UltraFET Power MOS FES)
FQT13N06TF FAIRCHILD 2010+ SOT-223 60V N-Channel QFET; Package: SOT-223; No of Pins: 3; Container: Tape & Reel
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FQP80N06 FAIRCHILD 2010+ TO-220 60V P-channel MOSFETs
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