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RFD14N05LSM9A
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RFD14N05LSM9A

  • Category:FETs
  • Product Name:14A, 50V, 0.100 Ohm, Logic Level,N-Channel Power MOSFETs(14A, 50V, 0.100 Ω, 逻辑电平N 沟道功率MOS场效应管)
  • Manufacturers:FAIRCHILD
  • Production Batch Number:2010+
  • Encapsulation:TO-252
  • Stock Status:There is stock
  • Stock Quantity:12000
  • Minimum order quantity: 1
  • Details:点击查找RFD14N05LSM9A的pdf资料
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  • Product introduction

RFD14N05LSM9A14A, 50V, 0.100 Ohm, Logic Level,N-Channel Power MOSFETs(14A, 50V, 0.100 Ω, 逻辑电平N 沟道功率MOS场效应管)

andRFD14N05LSM9ARelated ICs are:


Model Manufacturers lot number encapsulation illustrate
FDMS8660S VISHAY 2010+ QFN-8 N-channel PowerTrench-style SyncFET (30V, 40A, 2.4mOHM
SI4435DY VISHAY 2010+ SOP-8 30V P-Channel PowerTrench MOSFET; ; No of Pins: 8; Container: Tape & Reel
SFP9540 FAIRCHILD 2010+ TO-220 P-Channel Power MOSFET (P-Channel Power MOS FET with drain-to-source voltage of -100V)
RFP70N06 FAIRCHILD 2010+ TO-220 70A, 60V, 0.014 Ohm, N-Channel Power MOSFETs; Package: TO-220; No of Pins: 3; Container: Rail
RFD16N05LSM FAIRCHILD 2010+ TO-252 16A, 50V, 0.047 Ohm, Logic Level, N-Channel Power MOSFETs(16A, 50V, 0.047 Ω N 沟道功率MOS场效应管)
RFD14N05LSM FAIRCHILD 2010+ TO-252 14A, 50V, 0.100 Ohm, Logic Level,N-Channel Power MOSFETs(14A, 50V, 0.100 Ω, 逻辑电平N 沟道功率MOS场效应管)
RFD14N05L FAIRCHILD 2010+ TO-251 14A, 50V, 0.100 Ohm, Logic Level,N-Channel Power MOSFETs(14A, 50V, 0.100 Ω, 逻辑电平N 沟道功率MOS场效应管)
NDT451AN FAIRCHILD 2010+ SOT-223 N-Channel Enhancement Mode Field Effect Transistor（7.2A，30V，0.035Ω）(N沟道增强型场效应管（漏电流7.2A, 漏源电压30V，导通电阻0.035Ω）)
NDS356AP FAIRCHILD 2010+ SOT-23-3 P-Channel Logic Level Enhancement Mode Field Effect Transistor（-1.1A，-30V，0.3Ω）(P沟道逻辑增强型MOS场效应管（漏电流-1.1A, 漏源电压-30V，导通电阻0.3Ω）)
NDS355AN FAIRCHILD 2010+ SOT-23-3 N-Channel Logic Level Enhancement Mode Field Effect Transistor（1.7A，30V，0.125Ω）(N沟道逻辑增强型MOS场效应管（漏电流1.7A, 漏源电压30V，导通电阻0.125Ω）)

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FAIRCHILD BRAND PRODUCT RECOMMENDATION


Model Manufacturers lot number encapsulation illustrate
RFD14N05LSM FAIRCHILD 2010+ TO-252 14A, 50V, 0.100 Ohm, Logic Level,N-Channel Power MOSFETs(14A, 50V, 0.100 Ω, 逻辑电平N 沟道功率MOS场效应管)
RFD14N05L FAIRCHILD 2010+ TO-251 14A, 50V, 0.100 Ohm, Logic Level,N-Channel Power MOSFETs(14A, 50V, 0.100 Ω, 逻辑电平N 沟道功率MOS场效应管)
NDT451AN FAIRCHILD 2010+ SOT-223 N-Channel Enhancement Mode Field Effect Transistor（7.2A，30V，0.035Ω）(N沟道增强型场效应管（漏电流7.2A, 漏源电压30V，导通电阻0.035Ω）)
NDS356AP FAIRCHILD 2010+ SOT-23-3 P-Channel Logic Level Enhancement Mode Field Effect Transistor（-1.1A，-30V，0.3Ω）(P沟道逻辑增强型MOS场效应管（漏电流-1.1A, 漏源电压-30V，导通电阻0.3Ω）)
NDS355AN FAIRCHILD 2010+ SOT-23-3 N-Channel Logic Level Enhancement Mode Field Effect Transistor（1.7A，30V，0.125Ω）(N沟道逻辑增强型MOS场效应管（漏电流1.7A, 漏源电压30V，导通电阻0.125Ω）)
NDS352AP FAIRCHILD 2010+ SOT-23-3 P-Channel Logic Level Enhancement Mode Field Effect Transistor（-0.9A，-30V，0.5Ω）(P沟道逻辑增强型MOS场效应管（漏电流-0.9A, 漏源电压-30V，导通电阻0.5Ω）)
FDN5630_NL FAIRCHILD 2010+ SOT-23 60V N-Channel PowerTrench MOSFET; Package: SuperSOT; No of Pins: 3; Container: Tape & Reel
MTP3055VL FAIRCHILD 2010+ TO-220 N沟道增强模式的逻辑电平场效应晶体管 N-Channel Logic Level Enhancement Mode Field Effect Transistor; Package: TO-220AB; No of Pins: 3; Container: Rail
HUF76407D3ST FAIRCHILD 2010+ TO-252 11A,60V, 0.107 Ohm, N-Channe, Logic Level UltraFET Power MOSFET; Package: TO-252(DPAK); No of Pins: 2; Container: Tape & Reel
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HUF75653G3 FAIRCHILD 2010+ TO-220 75A, 100V, 0.008 Ohm, N-Channel UltraFET Power MOSFET (75A, 100V, 0.008Ω N-Channel Logic Level Power MOS FET)
HUF75545P3 FAIRCHILD 2010+ TO-220 75A, 80V, 0.010 Ohm, N-Channel, UltraFET Power MOSFET (75A, 80V, 0.010Ω N-channel logic level power MOS FET
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