Model |
Manufacturers |
lot number |
encapsulation |
illustrate |
RFD16N05LSM |
FAIRCHILD |
2010+ |
TO-252 |
16A, 50V, 0.047 Ohm, Logic Level, N-Channel Power MOSFETs(16A, 50V, 0.047 Ω N 沟道功率MOS场效应管) |
RFD14N05LSM9A |
FAIRCHILD |
2010+ |
TO-252 |
14A, 50V, 0.100 Ohm, Logic Level,N-Channel Power MOSFETs(14A, 50V, 0.100 Ω, 逻辑电平N 沟道功率MOS场效应管) |
RFD14N05LSM |
FAIRCHILD |
2010+ |
TO-252 |
14A, 50V, 0.100 Ohm, Logic Level,N-Channel Power MOSFETs(14A, 50V, 0.100 Ω, 逻辑电平N 沟道功率MOS场效应管) |
RFD14N05L |
FAIRCHILD |
2010+ |
TO-251 |
14A, 50V, 0.100 Ohm, Logic Level,N-Channel Power MOSFETs(14A, 50V, 0.100 Ω, 逻辑电平N 沟道功率MOS场效应管) |
NDT451AN |
FAIRCHILD |
2010+ |
SOT-223 |
N-Channel Enhancement Mode Field Effect Transistor(7.2A,30V,0.035Ω)(N沟道增强型场效应管(漏电流7.2A, 漏源电压30V,导通电阻0.035Ω)) |
NDS356AP |
FAIRCHILD |
2010+ |
SOT-23-3 |
P-Channel Logic Level Enhancement Mode Field Effect Transistor(-1.1A,-30V,0.3Ω)(P沟道逻辑增强型MOS场效应管(漏电流-1.1A, 漏源电压-30V,导通电阻0.3Ω)) |
NDS355AN |
FAIRCHILD |
2010+ |
SOT-23-3 |
N-Channel Logic Level Enhancement Mode Field Effect Transistor(1.7A,30V,0.125Ω)(N沟道逻辑增强型MOS场效应管(漏电流1.7A, 漏源电压30V,导通电阻0.125Ω)) |
NDS352AP |
FAIRCHILD |
2010+ |
SOT-23-3 |
P-Channel Logic Level Enhancement Mode Field Effect Transistor(-0.9A,-30V,0.5Ω)(P沟道逻辑增强型MOS场效应管(漏电流-0.9A, 漏源电压-30V,导通电阻0.5Ω)) |
FDN5630_NL |
FAIRCHILD |
2010+ |
SOT-23 |
60V N-Channel PowerTrench MOSFET; Package: SuperSOT; No of Pins: 3; Container: Tape & Reel |
MTP3055VL |
FAIRCHILD |
2010+ |
TO-220 |
N沟道增强模式的逻辑电平场效应晶体管 N-Channel Logic Level Enhancement Mode Field Effect Transistor; Package: TO-220AB; No of Pins: 3; Container: Rail |
HUF76407D3ST |
FAIRCHILD |
2010+ |
TO-252 |
11A,60V, 0.107 Ohm, N-Channe, Logic Level UltraFET Power MOSFET; Package: TO-252(DPAK); No of Pins: 2; Container: Tape & Reel |
HUF75882G3 |
FAIRCHILD |
2010+ |
TO-220 |
75A, 100V, 0.008 Ohm, N-Channel UltraFET Power MOSFET (75A, 100V, 0.008Ω N-Channel Logic Level Power MOS FET) |
HUF75653G3 |
FAIRCHILD |
2010+ |
TO-220 |
75A, 100V, 0.008 Ohm, N-Channel UltraFET Power MOSFET (75A, 100V, 0.008Ω N-Channel Logic Level Power MOS FET) |
HUF75545P3 |
FAIRCHILD |
2010+ |
TO-220 |
75A, 80V, 0.010 Ohm, N-Channel, UltraFET Power MOSFET (75A, 80V, 0.010Ω N-channel logic level power MOS FET |
HUF75339S3ST |
FAIRCHILD |
2010+ |
TO-263 |
Power FET |
HUF75339S3S |
FAIRCHILD |
2010+ |
TO-263 |
75A, 55V, 0.012 Ohm, N-Channel UltraFET Power MOSFETs (75A, 55V, 0.012 Ω, N-Channel UltraFET Power MOS FES) |
HUF75339P3 |
FAIRCHILD |
2010+ |
TO-220 |
75A, 55V, 0.012 Ohm, N-Channel UltraFET Power MOSFETs (75A, 55V, 0.012 Ω, N-Channel UltraFET Power MOS FES) |
HUF75339G3 |
FAIRCHILD |
2010+ |
TO-247 |
75A, 55V, 0.012 Ohm, N-Channel UltraFET Power MOSFETs (75A, 55V, 0.012 Ω, N-Channel UltraFET Power MOS FES |
HUF75321P3 |
FAIRCHILD |
2010+ |
TO-220 |
35A, 55V, 0.034 Ohm, N-Channel UltraFET Power MOSFETs (35A, 55V, 0.034 Ω, N-Channel UltraFET Power MOS FES) |
FQT13N06TF |
FAIRCHILD |
2010+ |
SOT-223 |
60V N-Channel QFET; Package: SOT-223; No of Pins: 3; Container: Tape & Reel |