16 Gb, 3 V, 4-bit ECC, x8 I/O, SLC NAND
Flash Memory for Embedded
General Description
SkyHigh S34ML16G2 16-Gb NAND is offered in 3.3 VCC with ×8 I/O interface. This document contains information for the
S34ML16G2 device, which is a quad-die stack of four S34ML04G2 die. For detailed specifications, please refer to the discrete die
data sheet: S34ML01G2_04G2.
Distinctive Characteristics
n Density
– 16-Gb (4-Gb ´ 4)
n Architecture (For each 4-Gb device)
– Input / Output Bus Width: 8-bits
– Page Size: (2048 + 128) bytes; 128-byte spare area
– Block Size: 64 Pages or (128k + 8k) bytes
– Plane Size
– 2048 Blocks per Plane or (256M + 16M) bytes
– Device Size
– 2 Planes per Device or 512 Mbyte
n NAND Flash Interface
– Open NAND Flash Interface (ONFI) 1.0 compliant
– Address, Data and Commands multiplexed
n Supply Voltage
– 3.3 V device: Vcc = 2.7 V ~ 3.6 V
n Security
– One Time Programmable (OTP) area
– Serial number (unique ID)
– Hardware program/erase disabled during power transition
n Additional Features
– Supports Multiplane Program and Erase commands
– Supports Copy Back Program
– Supports Multiplane Copy Back Program
– Supports Read Cache
n Electronic Signature
– Manufacturer ID: 01h
n Operating Temperature
– Industrial: -40 °C to 85 °C
Performance
n Page Read / Program
– Random access: 30 µs (Max)
– Sequential access: 25 ns (Min)
– Program time / Multiplane Program time: 300 µs (Typ)
n Block Erase / Multiplane Erase
– Block Erase time: 3.5 ms (Typ)
n Reliability
– 100,000 Program / Erase cycles (Typ)
(with 4-bit ECC per 528 bytes)
– 10 Year Data retention (Typ)
– Blocks zero and one are valid and will be valid for at least
1000
program-erase cycles with ECC
n Package Options
– Lead Free and Low Halogen
– 48-Pin TSOP 12 ´ 20 ´ 1.2 mm
– 63-Ball BGA 9 ´ 11 ´ 1.2 mm
S34ML16G202BHI000
S34ML16G202TFI200
S34ML16G202BHI003
S34ML16G202BHI000
S34ML16G202TFI203
S34ML16G302TFB200
S34ML16G302TFI200
S34ML16G302TFI203
S34ML16G302TFV200
S34ML16G302TFV203
S34ML16G302TFA200
S34ML16G302TFA203
S34ML16G302TFB203