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SI2301BDS
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SI2301BDS

  • Category:FETs
  • Product Name:NPN silicon RF power transistor
  • Manufacturers:VISHAY
  • Production Batch Number:10+PB
  • Encapsulation:SOT-23
  • Stock Status:There is stock
  • Stock Quantity:8000
  • Minimum order quantity: 1
  • Details:Click here to find the PDF information of SI2301BDS
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  • Product introduction

SI2301BDSNPN silicon RF power transistorMOSFET; Transistor Polarity:P Channel; Drain Source Voltage, Vds:-20V; Continuous Drain Current, Id:-2.2A; On-Resistance, Rds(on):0.1ohm; Rds(on) Test Voltage, Vgs:-4.5V; Package/Case:SOT-23; Leaded Process Compatible:Yes

andSI2301BDSRelated ICs are:


Model Manufacturers lot number encapsulation illustrate
SI2301BDS VISHAY 10+PB SOT-23 NPN silicon RF power transistor
SI2301BDS-T1-E3 2012 04+ SMD  
SI2301BDS-T1-E3 ROHM 05+ SOT163  

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