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SI3585DV-T1-E3
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Category:Discrete components
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Product Name:MOSFET; Transistor Polarity:Dual N/P Channel; Drain Source Voltage, Vds:20V; Continuous Drain Current, Id:19A; On-Resistance, Rds(on):0.2ohm; Rds(on)
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Manufacturers:VISHAY
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Production Batch Number:10+
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Encapsulation:TSOP-6
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Stock Status:There is stock
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Stock Quantity:120000
- Minimum order quantity: 1
- Details:
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MOSFET; Transistor Polarity:Dual N/P Channel; Drain Source Voltage, Vds:20V; Continuous Drain Current, Id:19A; On-Resistance, Rds(on):0.2ohm; Rds(on) Test Voltage, Vgs:4.5V; Package/Case:6-TSOP; Drain-Source Breakdown Voltage:20V
andSI3585DV-T1-E3Related ICs are:
| Model |
Manufacturers |
lot number |
encapsulation |
illustrate |
| SI3585DV-T1-E3 |
VISHAY |
10+ |
TSOP-6 |
MOSFET; Transistor Polarity:Dual N/P Channel; Drain Source Voltage, Vds:20V; Continuous Drain Current, Id:19A; On-Resistance, Rds(on):0.2ohm; Rds(on) |
| SI3585DV |
Vishay |
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SO-8 |
N／A |
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05+ |
SO-8 |
N／A |
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