| Model |
Manufacturers |
lot number |
encapsulation |
illustrate |
| IPUH6N03LB |
INFINEON |
10+ |
TO-251 |
25.0 V 50.0 A N channel FET OptiMOS(3)2 Power-Transistor |
| IPUH6N03LA |
INFINEON |
10+ |
TO-251 |
25.0 V 50.0 A N channel FET OptiMOS(3)2 Power-Transistor |
| IPU78CN10N |
INFINEON |
10+ |
TO-251 |
N-channel FET OptiMOS(3)2 Power-Transistor |
| IPU13N03LA |
INFINEON |
10+ |
TO-251 |
25.0 V; 30.0 A N channel FET OptiMOS(3)2 Power-Transistor |
| IPU10N03LA |
INFINEON |
10+ |
TO-251 |
30.0 V N-channel FET OptiMOS(3)2 Power-Transistor |
| IPU09N03LB |
INFINEON |
10+ |
TO-251 |
30.0 V N-channel FET OptiMOS(3)2 Power-Transistor |
| IPU09N03LA |
INFINEON |
10+ |
TO-251 |
25.0 V N-channel FET OptiMOS(3)2 Power-Transistor |
| IPU06N03LB |
INFINEON |
10+ |
TO-251 |
25.0 V N-channel FET OptiMOS(3)2 Power-Transistor |
| IPU06N03LA |
INFINEON |
10+ |
TO-251 |
25.0 V N-channel FET OptiMOS(3)2 Power-Transistor |
| IPU05N03LA |
INFINEON |
10+ |
TO-251 |
25.0 V N-channel FET OptiMOS(3)2 Power-Transistor |
| IPU04N03LB |
INFINEON |
10+ |
TO-251 |
25.0 V N-channel FET OptiMOS(3)2 Power-Transistor |
| IPU04N03LA |
INFINEON |
10+ |
TO-251 |
25.0 V N-channel FET OptiMOS(3)2 Power-Transistor |
| IPU039N03L |
INFINEON |
10+ |
TO-251 |
30.0 V N-channel FET OptiMOS(3)2 Power-Transistor |
| IPSH9N03LA |
INFINEON |
10+ |
TO-251 |
25.0 V N-channel FET OptiMOS(3)2 Power-Transistor |
| IPSH6N03LB |
INFINEON |
10+ |
TO251-3 |
30V N-channel FET OptiMOS(3)2 Power-Transistor |
| IPSH6N03LA |
INFINEON |
10+ |
P-TO251-3 |
N-Channel MOSFETs (20V... 250V); Package: PG-TO251-3; Package: IPAK SL (TO-251 SL); VDS (max): 25.0 V; RDS (on) (max) (@10V): 6.2 mOhm; RDS (on) ( |
| IPSH5N03LA |
INFINEON |
10+ |
P-TO251-3 |
N-channel field effect tube OptiMOS(3)2 Power-Transistor |
| IPSH4N03LA |
INFINEON |
10+ |
P-TO251-3 |
N-channel dowFET OPTIMOS 2 POWER - TRANSISTOR |
| IPS13N03LA |
INFINEON |
10+ |
P-TO251-3 |
N-channel Dow field effect tube |
| IPS10N03LA |
INFINEON |
10+ |
P-TO251-3 |
N-channel Dow field effect tube |