Model |
Manufacturers |
lot number |
encapsulation |
illustrate |
TPC8113 |
TOSHIBA |
10+ |
SOP8 |
TRANSISTOR SILICON P CHANNEL MOS TYPE |
TPC8121 |
TOSHIBA |
10+ |
SOP8 |
TRANSISTOR SILICON P CHANNEL MOS TYPE |
TPC8111 |
TOSHIBA |
10+ |
SOP8 |
TRANSISTOR SILICON P CHANNEL MOS TYPE |
TPC8103 |
TOSHIBA |
10+ |
SOP8 |
TRANSISTOR SILICON P CHANNEL MOS TYPE |
TPC8119 |
TOSHIBA |
10+ |
SOP8 |
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOS IV) Toshiba Field Effect Transistor Silicon P Channel Maanshan Type (U-shaped Maanshan IV) |
TPC8109 |
TOSHIBA |
10+ |
SOP8 |
FIELD EFFECT TRANSISTOR SILICON P CHANNEL MOS TYPE |
TPC8106-H |
TOSHIBA |
10+ |
SOP8 |
SILICON P CHANNEL MOS TYPE |
HN4D02JU |
TOSHIBA |
2010+ |
SOT23-5 |
Ultra High Speed Switching Applications |
DB105S |
TOSHIBA |
11+ |
SMA |
Single-phase glass passivated silicon bridge rectifier |
DB105 |
TOSHIBA |
10+ |
SMA |
Bridge rectifier |
2SA1012 |
TOSHIBA |
14+ |
TO-220 |
Power transistors (50V with 5A bars, 25 watts) |
2SC3150 |
TOSHIBA |
10+ |
TO-220 |
NPN TRIPLE DIFFUSED (for Switching Regulator and High Voltage) |
2SC3148 |
TOSHIBA |
10+ |
TO-220 |
NPN TRIPLE DIFFUSED (for Switching Regulator and High Voltage) |
TIP112 |
TOSHIBA |
2010+ |
TO-220 |
Complemetary Silicon Power Darlington Transistors |
TIP120 |
TOSHIBA |
2010+ |
TO-220 |
Complemetary Silicon Power Darlington Transistors |
2SD1415 |
TOSHIBA |
2010+ |
TO-220 |
TRANSISTOR | BJT | DARLINGTON | NPN | 100V V(BR)CEO | 7A I(C) | TO-220VAR |
2SK2615 |
TOSHIBA |
10+ |
SOT-89 |
High-speed, high-current switching applications N-channel MOSFETs (N-channel FETs for high-speed high-current conversion) |
TLN113 |
TOSHIBA |
10+ |
Launch tubes |
Launch tubes |
TLN210 |
TOSHIBA |
10+ |
Launch tubes |
Launch tubes |
PNZ4120001AL |
TOSHIBA |
10+ |
With Schmidt receiver tube |
With Schmidt receiver tube |