TPS1120

• Product Introduction

TPS1101 is a single, low RDS(on), P-channel, enhanced MOSFET. The device is optimized for power distribution in either 3 V or 5 V battery-powered systems using Texas Instruments' LinBiCMOSTM means

Process. The largest VGS (times) -1.5 V and only 0.5 microamperes of intelligent decision support systems are ideal TPS1101 high side low voltage, portable battery management systems are a major problem in switching to extend battery life. The TPS1101 of low RDS(ON) and excellent AC characteristics (5.5 nanoseconds rise time typical) make it an inevitable choice for low-voltage switching applications such as pulse width modulation (PWM) controllers or power switching applications for motors/bridge drivers.

Ultra-thin tight form factor packages or TSSOP(PW) versions are suitable for P-channel MOSFETs in other regions where height is restricted.

TPS1101 characteristics

• Low RDS (ON). 。 。 0.09Ω typical value at VGS = -10 V
• 3 V compatible
• No external VCC is required
• TTL and CMOS compatible inputs
• VGS (times) = -1.5 V max
• Available in Ultra-Thin TSSOP Packages (Wednesday)
• ESD protection up to 2 kV according to MIL-STD-883C, method 3015 kV