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TS10P06G
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TS10P06G

  • Category:A bridge rectifier
  • Product Name:Bridge rectifier
  • Manufacturers:LTSEP
  • Production Batch Number:09+
  • Encapsulation:DIP
  • Stock Status:There is stock
  • Stock Quantity:0
  • Minimum order quantity: 1
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  • Product introduction

 Single-phase ten point 0 amperes. Glass passivation rectifier bridge

Single Phase 10.0 Amps. Glass Passivated Bridge Rectifiers

andTS10P06GRelated ICs are:


Model Manufacturers lot number encapsulation illustrate
TS10P08G TSC 09+PB DIP-4 Bridge rectifier
BSC025N03MS INFINEON 2011+ TDSON-8 N-Channel 30.0 V 100.0 A FETs N-Channel MOSFETs (20V... 250V); Package: PG-TDSON-8; Package: SuperSO8; VDS (max): 30.0 V; RDS (on) (max) (@10V): 3.0 mOhm;
BSC027N03S INFINEON 2011+ TDSON-8 N-Channel 30.0 V 100.0 A FETs N-Channel MOSFETs (20V... 250V); Package: PG-TDSON-8; Package: SuperSO8; VDS (max): 30.0 V; RDS (on) (max) (@10V): 3.0 mOhm;
TS10P07G LTSEP 09+ DIP Bridge rectifier
BSC060N10NS3 INFINEON 2011+ TDSON-8 N-Channel 100.0 V 90.0 A FETs N-Channel MOSFETs (20V... 250V); Package: PG-TDSON-8; Package: SuperSO8; VDS (max): 100.0 V; RDS (on) (max) (@10V): 6.0 mOhm;
BSC057N08NS3G INFINEON 2011+ TDSON-8 N-channel, 80.0 V 100.0 A FETs N-Channel MOSFETs (20V... 250V); Package: PG-TDSON-8; Package: SuperSO8; VDS (max): 80.0 V; RDS (on) (max) (@10V): 5.7 mOhm; RDS
BSC100N03LSG INFINEON 2011+ TDSON-8 N-channel, 30.0 V 44.0 A FET N-Channel MOSFETs (20V... 250V); Package: PG-TDSON-8; Package: SuperSO8; VDS (max): 30.0 V; RDS (on) (max) (@10V): 10.0 mOhm; RDS (
BSC100N03MSG INFINEON 10+ TDSON-8 N-Channel 30.0 V 44.0 A FETs N-Channel MOSFETs (20V... 250V); Package: PG-TDSON-8; Package: SuperSO8; VDS (max): 30.0 V; RDS (on) (max) (@10V): 10.0 mOhm;
BSC090N03LSG INFINEON 10+ TDSON-8 N-Channel 30.0 V 47.0 A FET N-Channel MOSFETs (20V... 250V); Package: PG-TDSON-8; Package: SuperSO8; VDS (max): 30.0 V; RDS (on) (max) (@10V): 9.0 mOhm; RD
BSC047N08NS3G INFINEON 10+ TDSON-8 N-Channel 80.0 V 100.0 A FET N-Channel MOSFETs (20V... 250V); Package: PG-TDSON-8; Package: SuperSO8; VDS (max): 80.0 V; RDS (on) (max) (@10V): 4.7 mOhm; RDS

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