Product model Product Name lot number Manufacturers encapsulation quantity  
NDS356AP P-Channel Logic Level Enhancement Mode Field Effect Transistor (-1.1A, -30V, 0.3Ω) (P-Channel Logic Enhanced MOS FET (Leakage Current -1.1A, Drain Source Voltage -30V, On-Resistance 0.3Ω)) 2010+ FAIRCHILD SOT-23-3 Delete

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