Product model Product name lot number Manufacturers encapsulation quantity  
NDS356AP P-Channel Logic Level Enhancement Mode Field Effect Transistor(-1.1A, -30V, 0.3Ω) (P-channel logic enhancement MOS FET (leakage current -1.1A, drain-to-source voltage-30V, on-resistance 0.3Ω)) 2010+ FAIRCHILD SOT-23-3 Delete

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