Product model Product name lot number Manufacturers encapsulation quantity  
2N7002E N-channel Enhanced FET N-channel TrenchMOS FET - Configuration: Single N-channel; ID DC: 0.3 A; RDS(on): 4400@10V5300@4.5V mOhm; VDSmax: 60 V 11+ NXP SOT-23 Delete

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