Product model Product name lot number Manufacturers encapsulation quantity  
PSMN102-200Y N-channel TrenchMOS standard level FET - Configuration: Single N-channel ; ID DC: 21.5 A; Qgd (typ): 10.1 nC; RDS(on): 102@10V mOhm; VDSmax: 200 V 10+ NXP SOT-669 Delete

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