Product model Product name lot number Manufacturers encapsulation quantity  
NDT2955 P-Channel Enhancement Mode Field Effect Transistor(-2.5A, -60V, 0.3Ω) (P-channel enhanced FET (leakage current -2.5A, drain-to-source voltage-60V, on-resistance 0.3Ω)) 10+ ON SOT-223 Delete

Your name:
Company Name:
Address:
Phone:
Email:
Zip:
Remark:

  Continue selecting