主页 > 产品中心 > 整流器
BYV28-50
产品图片仅供参考 欢迎索取产品详细资料

BYV28-50

  • 所属类别:整流器
  • 产品名称:超高速低损失控制雪崩整流器(超快速低损耗控制的雪崩整流器)
  • 厂商:NXP
  • 生产批号:07+
  • 封装:SOD-64
  • 库存状态:有库存
  • 库存量:9000
  • 最低订购量:1
  • 详细资料:点击查找BYV28-50的pdf资料
  • 点击询价
联系我们在线客服1 在线客服2 点击发送邮件
  • 产品介绍

BYV28-50  超高速低损失控制雪崩整流器(超快速低损耗控制的雪崩整流器)Ultra fast low-loss controlled avalanche rectifier

 

与BYV28-50相关的IC还有:


型号 厂商 批号 封装 说明
BYV26C VISHAY 10+ SOD-57 快速软恢复控制雪崩整流器(快速软恢复可控雪崩整流器)ECONOLINE: RQS & RQD - 1kVDC Isolation- Internal SMD Construction- UL94V-0 Package Material- Toroidal Magnetics- Efficiency
FE2D VISHAY 10+ SOD-57 Glass Passivated Fast Efficient Rectifier(钝化玻璃快速效应整流器)
BYV27-200S VISHAY 10+ DO-64 超高速低损失控制雪崩整流器(超快速低损耗控制的雪崩整流器)
GI1102 VISHAY 10+ SOD-57 Glass Passivated Fast Efficient Rectifier(钝化玻璃快速效应整流器)
BYM26C NXP 10+ SOD-64 快速软恢复控制雪崩整流器(快速软恢复可控雪崩整流器(600V的)) INNOLINE: RP50-S - Single Outputs up to 15A- Input/Output 1.6kVDC Isolation- Adjustable Output Voltage- No Minimum
BYV28-200 VISHAY 10+ SOD-64 超高速低损失控制雪崩整流器(超快速低损耗控制的雪崩整流器)
SBYV26A VISHAY 10+ DO-41 玻璃钝化超快速整流器 TL Series Toggle Switch, 1 pole, 2 position, Screw terminal, Tab Lever
SBYV26B VISHAY 10+ DO-41 玻璃钝化超快速整流器 TL Series Toggle Switch, 1 pole, 2 position, Screw terminal, Tab Lever
SBYV26C VISHAY 10+ DO-41 玻璃钝化超快速整流器 TL Series Toggle Switch, 1 pole, 2 position, Screw terminal, Tab Lever
TPS61220 TI 09+ SC70-6 具有 5.5μA 静态电流的低输入电压、0.7V 升压转换器

çƒé—¨æœç´¢


型号 厂商 批号 封装 说明
KH208-8 Vitrohm 24+ DIP Resistor, 100 Milliohms, � 10%, 5 W, Axial Leaded, Wirewound, Power (Alt: KHS500KB-AX-R1AA)
GAP26MDS5T0000 Amphenol Positronic 23+ DIP 矩形 MIL 规格连接器
EE046-T11 德国E+E 24+ 模块 冷凝检测仪
A309560C7W Amphenol Energy Technologies 24+ 连接器 309 Connector,3P+N+E / 5W - 60A - Connector - 277/480V keway 7h,IP67
HBL430B7W Hubbell Premise Wiring 24+ 连接器 PS, IEC, INLET, 3P4W, 30A 3P 480V,4X/69K
621N-18F-10-6S Amphenol Corporation 24+ 连接器 Circular Connector Connector Plug Size 10
LV100-4000/SP6 莱姆 24+ 传感器 电流传感器德国原厂一手货源优势供应中
D-U307-KLS Mors Smitt 24+ 继电器 relay - Plug-in, 4 pole, AC coil
TDB4-U204-C Mors Smitt 24+ 继电器 延时继电器
ABCIRH01RC2214PCNF80M32V0 AB Connectors 23+ 连接器 连接器套装
ABCIRH01RC2214PCWF80M32V0 AB Connectors 23+ 连接器 连接器套装
ABCIRH01RC1812PCNF80M32V0 AB Connectors 23+ 连接器 连接器套装
AB0521001412PN00 AB Connectors 24+ 连接器 圆形连接器, AB05, MIL-DTL-26482 I系列, 墙壁安装插座, 12 触点, 焊接引脚, 卡口
TM-I2000/115-230P ABB 24+ 变压器 Single phase control and isolating transformer
C25-1AX-H13-N-HB-L HAIMOOO 24+ 控制手柄 控制手柄
F3069F25V Renesas 23+ QFP100 IC MCU 16BIT 512KB FLASH 100QFP
S3T-R-F5 DATALOGIC 22+ DIP photoelectric sensors
M393A8G40BB4-CWE Samsung 21+ BGA Samsung 64GB 2Rx4 PC4-3200 RDIMM DDR4-25600
TLP759(J,F) Toshiba 21+ DIP Optocoupler DC-IN 1-CH Transistor With Base DC-OUT 8-Pin PDIP
D-U204-ELK Mors Smitt 24+ 继电器 瞬时继电器

NXP品牌产品推荐


型号 厂商 批号 封装 说明
PSMN004-55W NXP 10+ TO-247 N沟道晶体管TrenchMOS N-channel logic level TrenchMOS (tm) transistor - Configuration: Single N-channel ; ID DC: 100 A; Qgd (typ): 106 nC; RDS(on): 4.2@
PSMN005-75B NXP 10+ TO-263-3 N沟道晶体管TrenchMOS Circular Connector; Body Material:Aluminum Alloy; Series:MS3111; Number of Contacts:10; Connector Shell Size:12; Connecting Termi
PSMN009-100W NXP 10+ TO-247 N沟道晶体管TrenchMOS Circular Connector; Body Material:Aluminum Alloy; Series:MS3111; Number of Contacts:10; Connector Shell Size:12; Connecting Termi
PSMN035-150P NXP 10+ TO-220 N沟道晶体管TrenchMO N-channel enhancement mode field-effect transistor - Configuration: Single N-channel ; ID DC: 50 A; Qgd (typ): 33 nC; RDS(on): 35@10V
PSMN057-200B NXP 10+ TO-263 N沟道增强型场效应晶体管N-channel TrenchMOS (tm) transistor - Configuration: Single N-channel ; ID DC: 39 A; Qgd (typ): 37 nC; RDS(on): 57@10V mOhm; VDSmax: 200 V
PSMN057-200P NXP 10+ SOT78/TO-220 N沟道增强型场效应晶体管N-channel TrenchMOS (tm) transistor - Configuration: Single N-channel ; ID DC: 39 A; Qgd (typ): 37 nC; RDS(on): 57@10V mOhm; VDSmax: 200 V
PSMN063-150D NXP 10+ SOT-252 N沟道增强型场效应晶体管Circular Connector; MIL SPEC:MIL-C-26482, Series I, Solder; Body Material:Aluminum; Series:PT06; Number of Contacts:4; Connector Shell Siz
PSMN070-200B NXP 10+ TO-263 N沟道晶体管TrenchMOS Circular Connector; Body Material:Aluminum; Series:PT07; Number of Contacts:41; Connector Shell Size:20; Connecting Termination:Cri
PSMN070-200P NXP 10+ TO-220 N-channel TrenchMOS standard level FET - Configuration: Single N-channel ; ID DC: 21.5 A; Qgd (typ): 10.1 nC; RDS(on): 102@10V mOhm; VDSmax: 200 V
PSMN102-200Y NXP 10+ SOT-669 N-channel TrenchMOS standard level FET - Configuration: Single N-channel ; ID DC: 21.5 A; Qgd (typ): 10.1 nC; RDS(on): 102@10V mOhm; VDSmax: 200 V
PSMN130-200D NXP 10+ SOT-252 N-channel TrenchMOS transistor(N沟道 TrenchMOS晶体管)
PSMN1R7-30YL NXP 10+ SOT-669 N-沟道场效应晶体管 N-channel Trenchmos (tm) enhanced logic level FET - Configuration: Single N-channel ; ID DC: 67 A; RDS(on): 8.2@10V13@4.5V mOhm; VDSmax: 3
PH9930L NXP 10+ SOT-669 N-沟道场效应晶体管 N-channel Trenchmos (tm) enhanced logic level FET - Configuration: Single N-channel ; ID DC: 67 A; RDS(on): 8.2@10V13@4.5V mOhm; VDSmax: 3
PH8230E NXP 10+ SOT-669 N-沟道场效应晶体管 N-channel Trenchmos (tm) enhanced logic level FET - Configuration: Single N-channel ; ID DC: 67 A; RDS(on): 8.2@10V13@4.5V mOhm; VDSmax: 3
PH7030L NXP 10+ SOT-669 沟道场效应晶体管逻辑电平Trenchmos (tm) enhanced logic level FET - Configuration: Single N-channel ; ID DC: 80 A; Qgd (typ): 6 nC; RDS(on): 5.7@10V8.5@4.5V mOhm; V
PSMN7R0-30YL NXP 10+ SOT-669 沟道场效应晶体管逻辑电平Trenchmos (tm) enhanced logic level FET - Configuration: Single N-channel ; ID DC: 80 A; Qgd (typ): 6 nC; RDS(on): 5.7@10V8.5@4.5V mOhm; V
PH6030L NXP 10+ SOT-669 沟道场效应晶体管逻辑电平Trenchmos (tm) enhanced logic level FET - Configuration: Single N-channel ; ID DC: 80 A; Qgd (typ): 6 nC; RDS(on): 5.7@10V8.5@4.5V mOhm; V
PSMN6R0-30YL NXP 10+ SOT-669 沟道场效应晶体管逻辑电平Trenchmos (tm) enhanced logic level FET - Configuration: Single N-channel ; ID DC: 80 A; Qgd (typ): 6 nC; RDS(on): 5.7@10V8.5@4.5V mOhm; V
PH8030L NXP 10+ SOT669 沟道场效应晶体管逻辑电平TrenchMOS
PH4530L NXP 10+ SOT-66 沟道场效应晶体管逻辑电平TrenchMOS

分类检索