型号 |
厂商 |
批号 |
封装 |
说明 |
IRF4905STRRPBF
|
IR |
10+ |
TO-263 |
HEXFET Power MOSFET |
IRF4905SPBF
|
IR |
10+ |
TO-263 |
HEXFET Power MOSFET |
IRF5305STRRPBF
|
IR |
10+ |
D2-pak |
HEXFET Power MOSFET |
IRF5305SPBF
|
IR |
10+ |
D2-pak |
HEXFET Power MOSFET |
IRF9Z34NSTRRPBF
|
IR |
10+ |
D2-pak |
Advanced Process Technology |
IRF9Z34NSPBF
|
IR |
10+ |
D2-pak |
Advanced Process Technology |
IRF9Z24NSTRLPBF
|
IR |
10+ |
TO-263 |
-55V Single P-Channel HEXFET Power MOSFET in a D2-Pak package; Similar to IRF9Z24NS with Lead Free Packaging |
IRF9Z24NSPBF
|
IR |
10+ |
TO-263 |
-55V Single P-Channel HEXFET Power MOSFET in a D2-Pak package; Similar to IRF9Z24NS with Lead Free Packaging |
IRF9Z24NSTRRPBF
|
IR |
10+ |
D2PAK |
-55V Single P-Channel HEXFET Power MOSFET in a D2-Pak package; Similar to IRF9Z24NSTRR with Lead Free Packaging |
IRF9520NPBF
|
IR |
10+ |
TO-251 |
HEXFET Power MOSFET |
IRFU5410PBF
|
IR |
10+ |
TO-251 |
HEXFET Power MOSFET |
IRFU9120NPBF
|
IR |
10+ |
TO-251 |
LA-MachXO Automotive Non-Volatile PLD For Low-Density Applications; LUTs: 2280; Supply Voltage: 1.2V; I/Os: 113; Grade: -3; Package: Lead-Free TQFP; P |
IRFR5410TRLPBF
|
IR |
10+ |
TO-252 |
HEXFET Power MOSFET |
IRFR5410TRRPBF
|
IR |
10+ |
TO-252 |
HEXFET Power MOSFET |
IRFR5410PBF
|
IR |
10+ |
TO-252 |
HEXFET Power MOSFET |
IRFR9120NTRRPBF
|
IR |
10+ |
SOT-263 |
P Channel Surface Mount HEXFET Power MOSFET(P沟道表贴型HEXFET功率MOS场效应管) |
IRFR9120NCTRPBF
|
IR |
10+ |
SOT-263 |
P Channel Surface Mount HEXFET Power MOSFET(P沟道表贴型HEXFET功率MOS场效应管) |
IRF5210LPBF
|
IR |
10+ |
SOT-263 |
HEXFET Power MOSFET |
IRF9540NLPBF
|
IR |
10+ |
SOT-263 |
HEXFET POWER MOSFET (VDSS = -100V , RDS(on) = 117mヘ , ID = -23A ) |
IRF9530NLPBF
|
IR |
10+ |
TO-262 |
Advanced Process Technology Surface Mount |