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2N7002E
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Category:FETs
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Product Name:N-channel Enhanced FET N-channel TrenchMOS FET - Configuration: Single N-channel; ID DC: 0.3 A; RDS(on): 4400@10V5300@4.5V mOhm; VDSmax: 60 V
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Manufacturers:NXP
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Production Batch Number:11+
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Encapsulation:SOT-23
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Stock Status:There is stock
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Stock Quantity:67000
- Minimum order quantity: 1
- Details:
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2N7002EN-channel enhanced field-effect transistorN-канальный полевой транзистор TrenchMOS - Конфигурация: Один N-канальный; Внутренний диаметр постоянного тока: 0,3 А; RDS (вкл.): 4400@10V5300@4,5 В мОм; VDSmax: 60 В
and2N7002ERelated ICs are:
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lot number |
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illustrate |
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| 2N7002ET1G |
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SOT-23 |
Small Signal MOSFET 60 V, 115 mA, N−Channel SOT−23 |
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SOT-23 |
Small Signal MOSFET 60 V, 115 mA, N−Channel SOT−23 |
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NXP |
11+ |
SOT-23 |
N-channel Enhanced FET N-channel TrenchMOS FET - Configuration: Single N-channel; ID DC: 0.3 A; RDS(on): 4400@10V5300@4.5V mOhm; VDSmax: 60 V |
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