| 型号 |
厂商 |
批号 |
封装 |
说明 |
|
BSC035N04LSG
|
INFINEON |
11+ |
SON-8 |
N通道 40.0 V; 100.0 A场效应管N-Channel MOSFETs (20V…250V); Package: PG-TDSON-8; Package: SuperSO8; VDS (max): 40.0 V; RDS (on) (max) (@10V): 3.5 mOhm; RDS ( |
|
BSC028N06LS3G
|
INFINEON |
11+ |
SON-8 |
N通道 60.0 V; 100.0 A场效应管N-Channel MOSFETs (20V…250V); Package: PG-TDSON-8; Package: SuperSO8; VDS (max): 60.0 V; RDS (on) (max) (@10V): 2.8 mOhm; RDS ( |
|
BSC027N04LSG
|
INFINEON |
11+ |
SON-8 |
N通道 40.0 V 100.0 A场效应管N-Channel MOSFETs (20V…250V); Package: PG-TDSON-8; Package: SuperSO8; VDS (max): 40.0 V; RDS (on) (max) (@10V): 2.7 mOhm; RDS (o |
|
BSC024N025SG
|
INFINEON |
11+ |
SON-8 |
N通道 40.0 V 100.0 A场效应管OptiMOS㈢2 Power-Transistor |
|
BSC020N025SG
|
INFINEON |
11+ |
TDSON-8 |
N通道 40.0 V 100.0 A场效应管OptiMOS㈢2 Power-Transistor |
|
BSC019N04NSG
|
INFINEON |
11+ |
TDSON-8 |
N通道 40.0 V 100.0 A场效应管N-Channel MOSFETs (20V…250V); Package: PG-TDSON-8; Package: SuperSO8; VDS (max): 40.0 V; RDS (on) (max) (@10V): 1.9 mOhm; RDS (o |
|
BSC018N04LSG
|
INFINEON |
11+ |
TDSON-8 |
N通道 40.0 V 100.0 A场效应管N-Channel MOSFETs (20V…250V); Package: PG-TDSON-8; Package: SuperSO8; VDS (max): 40.0 V; RDS (on) (max) (@10V): 1.6 mOhm; RDS (o |
|
BSC017N04NSG
|
INFINEON |
11+ |
TDSON-8 |
N通道 40.0 V 100.0 A场效应管N-Channel MOSFETs (20V…250V); Package: PG-TDSON-8; Package: SuperSO8; VDS (max): 40.0 V; RDS (on) (max) (@10V): 1.6 mOhm; RDS (o |
|
BSC016N04LSG
|
INFINEON |
11+ |
TDSON-8 |
N通道 40.0 V 100.0 A场效应管N-Channel MOSFETs (20V…250V); Package: PG-TDSON-8; Package: SuperSO8; VDS (max): 40.0 V; RDS (on) (max) (@10V): 1.6 mOhm; RDS (o |
|
BSC252N10NSFG
|
INFINEON |
11+ |
TDSON-8 |
N通道 100.0 V 40.0 A场效应管N-Channel MOSFETs (20V…250V); Package: PG-TDSON-8; Package: SuperSO8; VDS (max): 100.0 V; RDS (on) (max) (@10V): 25.2 mOhm; RDS |
|
BSC196N10NSG
|
INFINEON |
11+ |
TDSON-8 |
N通道 100.0 V 45.0 A场效应管N-Channel MOSFETs (20V…250V); Package: PG-TDSON-8; Package: SuperSO8; VDS (max): 100.0 V; RDS (on) (max) (@10V): 19.6 mOhm; RDS |
|
BSO615NV
|
INFINEON |
11+ |
SOP-8 |
小信号晶体管--60.0 V 2.6 A场效应管N-Channel MOSFETs (20V…250V); Package: PG-DSO-8; Package: SO-8; VDS (max): 60.0 V; RDS (on) (max) (@10V): -; RDS (on) (max) ( |
|
BSO615N
|
INFINEON |
11+ |
SOP-8 |
小信号晶体管--60.0 V 2.6 A场效应管N-Channel MOSFETs (20V…250V); Package: PG-DSO-8; Package: SO-8; VDS (max): 60.0 V; RDS (on) (max) (@10V): -; RDS (on) (max) ( |
|
BSC190N15NS3G
|
INFINEON |
11+ |
TDSON-8 |
N通道 150.0 V 50.0 A场效应管N-Channel MOSFETs (20V…250V); Package: PG-TDSON-8; Package: SuperSO8; VDS (max): 150.0 V; RDS (on) (max) (@10V): 19.0 mOhm; RDS |
|
BSC050N03LSG
|
INFINEON |
11+ |
TDSON-8 |
N通道 30.0 V 80.0 A场效应管 N-Channel MOSFETs (20V…250V); Package: PG-TDSON-8; Package: SuperSO8; VDS (max): 30.0 V; RDS (on) (max) (@10V): 5.0 mOhm; RDS |
|
BSC050N03MSG
|
INFINEON |
11+ |
TDSON-8 |
N通道 30.0 V 80.0 A场效应管 N-Channel MOSFETs (20V…250V); Package: PG-TDSON-8; Package: SuperSO8; VDS (max): 30.0 V; RDS (on) (max) (@10V): 5.0 mOhm; RDS |
|
BSC042N03LSG
|
INFINEON |
11+ |
TDSON-8 |
N-Channel MOSFETs (20V…250V); Package: PG-TDSON-8; Package: SuperSO8; VDS (max): 30.0 V; RDS (on) (max) (@10V): 4.2 mOhm; RDS (on) (max) (@4.5V): 6.5 |
|
BSC042N03MSG
|
INFINEON |
11+ |
TDSON-8 |
N-Channel MOSFETs (20V…250V); Package: PG-TDSON-8; Package: SuperSO8; VDS (max): 30.0 V; RDS (on) (max) (@10V): 4.2 mOhm; RDS (on) (max) (@4.5V): 6.5 |
|
BSC042N03SG
|
INFINEON |
11+ |
TDSON-8 |
N-Channel MOSFETs (20V…250V); Package: PG-TDSON-8; Package: SuperSO8; VDS (max): 30.0 V; RDS (on) (max) (@10V): 4.2 mOhm; RDS (on) (max) (@4.5V): 6.5 |
|
BSC032N03SG
|
INFINEON |
11+ |
TDSON-8 |
N沟道 30.0 V 100.0 A;场效应管 N-Channel MOSFETs (20V…250V); Package: PG-TDSON-8; Package: SuperSO8; VDS (max): 30.0 V; RDS (on) (max) (@10V): 3.2 mOhm; R |