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NDS356AP
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NDS356AP

  • Category:FETs
  • Product Name:P-Channel Logic Level Enhancement Mode Field Effect Transistor(-1.1A, -30V, 0.3Ω) (P-channel logic enhancement MOS FET (leakage current -1.1A, drain-to-source voltage-30V, on-resistance 0.3Ω))
  • Manufacturers:FAIRCHILD
  • Production Batch Number:2010+
  • Encapsulation:SOT-23-3
  • Stock Status:There is stock
  • Stock Quantity:12000
  • Minimum order quantity: 1
  • Details:Click here to find the PDF of the NDS356AP
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  • Product introduction

NDS356APP-Channel Logic Level Enhancement Mode Field Effect Transistor(-1.1A, -30V, 0.3Ω) (P-channel logic enhancement MOS FET (leakage current -1.1A, drain-to-source voltage-30V, on-resistance 0.3Ω))

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