NDT2955
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NDT2955

  • Category:FETs
  • Product Name:P-Channel Enhancement Mode Field Effect Transistor(-2.5A, -60V, 0.3Ω) (P-channel enhanced FET (leakage current -2.5A, drain-to-source voltage-60V, on-resistance 0.3Ω))
  • Manufacturers:ON
  • Production Batch Number:10+
  • Encapsulation:SOT-223
  • Stock Status:There is stock
  • Stock Quantity:80000
  • Minimum order quantity: 1
  • Details:Click here to find PDF information on NDT2955
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  • Product introduction

NDT2955P-Channel Enhancement Mode Field Effect Transistor(-2.5A, -60V, 0.3Ω) (P-channel enhanced FET (leakage current -2.5A, drain-to-source voltage-60V, on-resistance 0.3Ω))

Replaces CET6861

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NDT2955 ON 10+ SOT-223 P-Channel Enhancement Mode Field Effect Transistor(-2.5A, -60V, 0.3Ω) (P-channel enhanced FET (leakage current -2.5A, drain-to-source voltage-60V, on-resistance 0.3Ω))
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