| 型号 |
厂商 |
批号 |
封装 |
说明 |
|
DG212BDY
|
VISHAY |
10+ |
SOIC-16 |
Analog Switch / Multiplexer (Mux) IC; On-Resistance, Rds(on):85ohm; Analog Switch Function:General Purpose; Leakage Current:0.5nA; Supply Voltage Max: |
|
SI2304BDS
|
Vishay |
10+ |
SOT-23 |
N-Channel 30-V (D-S) MOSFET |
|
SI2304BDS-T1-E3
|
Vishay |
10+ |
SOT-23 |
N-Channel 30-V (D-S) MOSFET |
|
Si2328DS-T1-E3
|
Vishay |
10+ |
SOT-23 |
N沟道MOSFET的12V板网的开关电源,降压配置; N-Channel MOSFET for 12-V Boardnet SMPS; buck configuration; |
|
Si2308DS
|
Vishay |
10+ |
SOT-23 |
N沟道MOSFET的12V板网的开关电源,降压配置; N-Channel MOSFET for 12-V Boardnet SMPS; buck configuration; |
|
Si2308DS-T1-E3
|
Vishay |
10+ |
SOT-23 |
N沟道MOSFET的12V板网的开关电源,降压配置; N-Channel MOSFET for 12-V Boardnet SMPS; buck configuration; |
|
Si2308BDS-T1-E3
|
Vishay |
10+ |
SOT-23 |
N沟道MOSFET的12V板网的开关电源,降压配置; N-Channel MOSFET for 12-V Boardnet SMPS; buck configuration; |
|
Si2308BDS
|
Vishay |
10+ |
SOT-23 |
N沟道MOSFET的12V板网的开关电源,降压配置; N-Channel MOSFET for 12-V Boardnet SMPS; buck configuration; |
|
IRF1010
|
Vishay |
10+ |
TO-263 |
Power MOSFET(Vdss=60V,Rds(on)=12mohm,Id=84A |
|
IRF1310S
|
Vishay |
10+ |
TO-263 |
Power MOSFET(Vdss=100V, Rds(on)=0.036ohm, Id=42A) |
|
IRF1310
|
Vishay |
10+ |
TO-220 |
Power MOSFET(Vdss=100V, Rds(on)=0.036ohm, Id=42A) |
|
IRF510STRRPBF
|
Vishay |
11+ |
TO-263 |
N沟道增强型立式DMOS功率场效应管 5.6A, 100V, 0.540 Ohm, N-Channel Power MOSFET |
|
IRF510STRR
|
Vishay |
11+ |
TO-263 |
N沟道增强型立式DMOS功率场效应管 5.6A, 100V, 0.540 Ohm, N-Channel Power MOSFET |
|
IRF510STRLPBF
|
Vishay |
11+ |
TO-263 |
N沟道增强型立式DMOS功率场效应管 5.6A, 100V, 0.540 Ohm, N-Channel Power MOSFET |
|
IRF510STRL
|
Vishay |
11+ |
TO-263 |
N沟道增强型立式DMOS功率场效应管 5.6A, 100V, 0.540 Ohm, N-Channel Power MOSFET |
|
IRF510SPBF
|
Vishay |
11+ |
TO-263 |
N沟道增强型立式DMOS功率场效应管 5.6A, 100V, 0.540 Ohm, N-Channel Power MOSFET |
|
IRF510S
|
Vishay |
11+ |
TO-263 |
N沟道增强型立式DMOS功率场效应管 5.6A, 100V, 0.540 Ohm, N-Channel Power MOSFET |
|
IRF510PBF
|
Vishay |
11+ |
TO-220 |
N沟道增强型立式DMOS功率场效应管 5.6A, 100V, 0.540 Ohm, N-Channel Power MOSFET |
|
IRF510
|
Vishay |
11+ |
TO-220 |
N沟道增强型立式DMOS功率场效应管 5.6A, 100V, 0.540 Ohm, N-Channel Power MOSFET |
|
IRF511
|
Vishay |
11+ |
TO-220 |
N沟道增强型立式DMOS功率场效应管 RES 4.75K-OHM 1% 0.125W 100PPM THICK-FILM SMD-0805 5K/REEL-7IN-PA |