| 型号 |
厂商 |
批号 |
封装 |
说明 |
|
BSC080N03LSG
|
INFINEON |
10+ |
TDSON-8 |
N-Channel MOSFETs (20V…250V); Package: PG-TDSON-8; Package: SuperSO8; VDS (max): 30.0 V; RDS (on) (max) (@10V): 8.0 mOhm; RDS (on) (max) (@4.5V): 12.0 |
|
BSC079N03SG
|
INFINEON |
11+ |
SON-8 |
N-Channel MOSFETs (20V…250V); Package: PG-TDSON-8; Package: SuperSO8; VDS (max): 30.0 V; RDS (on) (max) (@10V): 7.9 mOhm; RDS (on) (max) (@4.5V): 11.6 |
|
BSC052N03S
|
INFINEON |
11+ |
TDSON8 |
N-Channel MOSFETs (20V…250V); Package: PG-TDSON-8; Package: SuperSO8; VDS (max): 30.0 V; RDS (on) (max) (@10V): 5.2 mOhm; RDS (on) (max) (@4.5V): 8.2 |
|
BSC050N03LS
|
INFINEON |
11+ |
TDSON-8 |
N-Channel MOSFETs (20V…250V); Package: PG-TDSON-8; Package: SuperSO8; VDS (max): 30.0 V; RDS (on) (max) (@10V): 5.0 mOhm; RDS (on) (max) (@4.5V): 7.5 |
|
BSC042N03MS
|
INFINEON |
11+ |
TDSON-8 |
N-Channel MOSFETs (20V…250V); Package: PG-TDSON-8; Package: SuperSO8; VDS (max): 30.0 V; RDS (on) (max) (@10V): 4.2 mOhm; RDS (on) (max) (@4.5V): 5.4 |
|
BSC042N03LS
|
INFINEON |
11+ |
TDSON8 |
N-Channel MOSFETs (20V…250V); Package: PG-TDSON-8; Package: SuperSO8; VDS (max): 30.0 V; RDS (on) (max) (@10V): 4.2 mOhm; RDS (on) (max) (@4.5V): 6.5 |
|
BSC030N03LSGXT
|
INFINEON |
11+ |
SOP-8 |
N-Channel MOSFETs (20V…250V); Package: PG-TDSON-8; Package: SuperSO8; VDS (max): 30.0 V; RDS (on) (max) (@10V): 3.0 mOhm; RDS (on) (max) (@4.5V): 4.7 |
|
BSC030N03LSG
|
INFINEON |
11+ |
TDSON-8 |
N-Channel MOSFETs (20V…250V); Package: PG-TDSON-8; Package: SuperSO8; VDS (max): 30.0 V; RDS (on) (max) (@10V): 1.6 mOhm; RDS (on) (max) (@4.5V): 2.3 |
|
BSC030N03LS
|
INFINEON |
11+ |
TDSON-8 |
N-Channel MOSFETs (20V…250V); Package: PG-TDSON-8; Package: SuperSO8; VDS (max): 30.0 V; RDS (on) (max) (@10V): 1.6 mOhm; RDS (on) (max) (@4.5V): 2.3 |
|
BSC016N03MS
|
INFINEON |
11+ |
TDSON-8 |
N-Channel MOSFETs (20V…250V); Package: PG-TDSON-8; Package: SuperSO8; VDS (max): 30.0 V; RDS (on) (max) (@10V): 1.6 mOhm; RDS (on) (max) (@4.5V): 2.3 |
|
BSC016N03LS
|
INFINEON |
10+ |
TDSON-8 |
N-Channel MOSFETs (20V…250V); Package: PG-TDSON-8; Package: SuperSO8; VDS (max): 30.0 V; RDS (on) (max) (@10V): 1.6 mOhm; RDS (on) (max) (@4.5V): 2.3 |
|
BSC014N03MS
|
INFINEON |
10+ |
TDSON-8 |
N-Channel MOSFETs (20V…250V); Package: PG-TDSON-8; Package: SuperSO8; VDS (max): 30.0 V; RDS (on) (max) (@10V): 1.4 mOhm; RDS (on) (max) (@4.5V): 2.1 |
|
BSC014N03LS
|
INFINEON |
09+ |
TDSON-8 |
N-Channel MOSFETs (20V…250V); Package: PG-TDSON-8; Package: SuperSO8; VDS (max): 30.0 V; RDS (on) (max) (@10V): 1.4 mOhm; RDS (on) (max) (@4.5V): 2.1 |
|
IKW03N120H2
|
INFINEON |
10+ |
TO-247 |
IGBT with Anti-Parallel Diode; Package: PG-TO247-3; Switching Frequency: HighSpeed2 30-100 kHz; Package: TO-247; VCE (max): 1,200.0 V; IC(max) @ 25°: |
|
IKP20N60T
|
INFINEON |
10+ |
TO-220 |
低损耗DuoPack:在IGBT的沟槽场终止技术和软,恢复快反平行何快恢复二极管 |
|
IKP15N60T
|
INFINEON |
10+ |
TO-220 |
低损耗DuoPack:在IGBT的沟槽场终止技术和软,恢复快反平行何快恢复二极管 |
|
IKP10N60T
|
INFINEON |
10+ |
TO-220 |
低损耗DuoPack:在IGBT的沟槽场终止技术和软,恢复快反平行何快恢复二极管 |
|
IKP06N60T
|
INFINEON |
10+ |
TO-220 |
低损耗DuoPack:在IGBT的沟槽场终止技术和软,恢复快反平行何快恢复二极管 |
|
IKP04N60T
|
INFINEON |
10+ |
TO-220 |
低损耗DuoPack:在IGBT的沟槽场终止技术和软,恢复快反平行何快恢复二极管 |
|
IKP03N120H2
|
INFINEON |
10+ |
TO-220 |
IGBT with Anti-Parallel Diode; Package: PG-TO220-3; Switching Frequency: HighSpeed2 30-100 kHz; Package: TO-220; VCE (max): 1,200.0 V; IC(max) @ 25°: |