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IPB06N03LB
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IPB06N03LB

  • Category:FETs
  • Product Name:功率晶体管 Circular Connector; Body Material:Aluminum; Series:PT06; No. of Contacts:55; Connector Shell Size:22; Connecting Termination:Crimp; Circular She
  • Manufacturers:INFINEON
  • Production Batch Number:2010+
  • Encapsulation:TO-263
  • Stock Status:There is stock
  • Stock Quantity:1600
  • Minimum order quantity: 1
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  • Product introduction

IPB06N03LB power transistorCircular Connector; Body Material:Aluminum; Series:PT06; No. of Contacts:55; Connector Shell Size:22; Connecting Termination:Crimp; Circular Shell Style:Straight Plug; Circular Contact Gender:Pin; Insert Arrangement:22-55

andIPB06N03LBRelated ICs are:


Model Manufacturers lot number encapsulation illustrate
IPB10N03LB INFINEON 2010+ TO-263 功率晶体管 N-Channel MOSFETs (20V… 250V); Package: PG-TO263-3; Package: D2PAK (TO-263); VDS (max): 30.0 V; RDS (on) (max) (@10V): 9.6 mOhm; RDS (on) (max) (
IPB09N03LA INFINEON 2010+ TO-263 Power Transistors N-Channel MOSFETs (20V... 250V); Package: PG-TO263-3; Package: D2PAK (TO-263); VDS (max): 25.0 V; RDS (on) (max) (@10V): 8.9 mOhm; RDS (on) (max) (
IPB08CNE8N INFINEON 2010+ TO-263 功率晶体管 N-Channel MOSFETs (20V… 250V); Package: PG-TO263-3; Package: D2PAK (TO-263); VDS (max): 85.0 V; RDS (on) (max) (@10V): 8.2 mOhm; RDS (on) (max) (
IPB08CN10N INFINEON 2010+ TO-263 功率晶体管 N-Channel MOSFETs (20V… 250V); Package: PG-TO263-3; Package: D2PAK (TO-263); VDS (max): 100.0 V; RDS (on) (max) (@10V): 8.5 mOhm; RDS (on) (max)
IPB075N150N3 INFINEON 2010+ TO-263 Power transistors
IPB06N03LA INFINEON 2010+ TO-263 功率晶体管 Circular Connector; Body Material:Aluminum; Series:PT06; No. of Contacts:55; Connector Shell Size:22; Connecting Termination:Crimp; Circular She
IPB06CNE8N INFINEON 2010+ TO-263 功率晶体管 N-Channel MOSFETs (20V… 250V); Package: PG-TO263-3; Package: D2PAK (TO-263); VDS (max): 85.0 V; RDS (on) (max) (@10V): 6.2 mOhm; RDS (on) (max) (
IPB06CN10N INFINEON 2010+ TO-263 功率晶体管 N-Channel MOSFETs (20V… 250V); Package: PG-TO263-3; Package: D2PAK (TO-263); VDS (max): 100.0 V; RDS (on) (max) (@10V): 6.5 mOhm; RDS (on) (max)
IPB05N03LB INFINEON 2010+ TO-263 功率晶体管 N-Channel MOSFETs (20V… 250V); Package: PG-TO263-3; Package: D2PAK (TO-263); VDS (max): 25.0 V; RDS (on) (max) (@10V): 4.6 mOhm; RDS (on) (max) (
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Model Manufacturers lot number encapsulation illustrate
IPB06N03LA INFINEON 2010+ TO-263 功率晶体管 Circular Connector; Body Material:Aluminum; Series:PT06; No. of Contacts:55; Connector Shell Size:22; Connecting Termination:Crimp; Circular She
IPB06CNE8N INFINEON 2010+ TO-263 功率晶体管 N-Channel MOSFETs (20V… 250V); Package: PG-TO263-3; Package: D2PAK (TO-263); VDS (max): 85.0 V; RDS (on) (max) (@10V): 6.2 mOhm; RDS (on) (max) (
IPB06CN10N INFINEON 2010+ TO-263 功率晶体管 N-Channel MOSFETs (20V… 250V); Package: PG-TO263-3; Package: D2PAK (TO-263); VDS (max): 100.0 V; RDS (on) (max) (@10V): 6.5 mOhm; RDS (on) (max)
IPB05N03LB INFINEON 2010+ TO-263 功率晶体管 N-Channel MOSFETs (20V… 250V); Package: PG-TO263-3; Package: D2PAK (TO-263); VDS (max): 25.0 V; RDS (on) (max) (@10V): 4.6 mOhm; RDS (on) (max) (
IPB05CN10N INFINEON 2010+ PG-TO263-3 功率晶体管 N-Channel MOSFETs (20V… 250V); Package: PG-TO263-3; Package: D2PAK (TO-263); VDS (max): 100.0 V; RDS (on) (max) (@10V): 5.4 mOhm; RDS (on) (max)
IPB051NE8N INFINEON 2010+ PG-TO263-3 功率晶体管 N-Channel MOSFETs (20V… 250V); Package: PG-TO263-3; Package: D2PAK (TO-263); VDS (max): 85.0 V; RDS (on) (max) (@10V): 5.1 mOhm; RDS (on) (max) (
IPB04N03LB INFINEON 2010+ TO-263 功率晶体管 -Channel MOSFETs (20V… 250V); Package: PG-TO263-3; Package: D2PAK (TO-263); VDS (max): 25.0 V; RDS (on) (max) (@10V): 3.9 mOhm; RDS (on) (max) (@
IPB04N03LA INFINEON 2010+ TO-263 功率晶体管 -Channel MOSFETs (20V… 250V); Package: PG-TO263-3; Package: D2PAK (TO-263); VDS (max): 25.0 V; RDS (on) (max) (@10V): 3.9 mOhm; RDS (on) (max) (@
IPB04CN10N INFINEON 10+ TO-263 N-Channel MOSFETs (20V… 250V); Package: PG-TO263-3; Package: D2PAK (TO-263); VDS (max): 100.0 V; RDS (on) (max) (@10V): 3.9 mOhm; RDS (on) (max) (@4.5V
IPB03N03LB INFINEON 10+ TO-263 N-Channel MOSFETs (20V… 250V); Package: PG-TO263-3; Package: D2PAK (TO-263); VDS (max): 25.0 V; RDS (on) (max) (@10V): 2.7 mOhm; RDS (on) (max) (@4.5V)
IPB03N03LA INFINEON 10+ TO-263 N-Channel MOSFETs (20V… 250V); Package: PG-TO263-3; Package: D2PAK (TO-263); VDS (max): 25.0 V; RDS (on) (max) (@10V): 2.7 mOhm; RDS (on) (max) (@4.5V)
IPB037N06N3 INFINEON 10+ TO-263 N-Channel MOSFETs (20V… 250V); Package: PG-TO263-3; Package: D2PAK (TO-263); VDS (max): 60.0 V; RDS (on) (max) (@10V): 3.7 mOhm; RDS (on) (max) (@4.5V)
IPB030N08N3 INFINEON 10+ TO-263 N-Channel MOSFETs (20V… 250V); Package: PG-TO263-7; Package: D2PAK 7pin (TO-263 7pin); VDS (max): 80.0 V; RDS (on) (max) (@10V): 3.0 mOhm; RDS (on) (ma
IPB027N10N3 INFINEON 10+ TO-263-3 N-Channel MOSFETs (20V... 250V); Package: PG-TO263-3; Package: D2PAK (TO-263); VDS (max): 100.0 V; RDS (on) (max) (@10V): 2.7 mOhm; RDS (on) (max) (@4.5V
IPB025N08N3 INFINEON 10+ TO-263-3 N-Channel MOSFETs (20V… 250V); Package: PG-TO263-3; Package: D2PAK (TO-263); VDS (max): 80.0 V; RDS (on) (max) (@10V): 2.5 mOhm; RDS (on) (max) (@4.5V)
IPB021N06N3G INFINEON 10+ TO-263-3 N-Channel MOSFETs (20V… 250V); Package: PG-TO263-3; Package: D2PAK (TO-263); VDS (max): 60.0 V; RDS (on) (max) (@10V): 2.4 mOhm; RDS (on) (max) (@4.5V)
IPB021N04N INFINEON 10+ TO-263-7 N-Channel MOSFETs (20V… 250V); Package: PG-TO263-3; Package: D2PAK (TO-263); VDS (max): 60.0 V; RDS (on) (max) (@10V): 2.4 mOhm; RDS (on) (max) (@4.5V)
IPB017N06N3 INFINEON 10+ TO-263-7 N-Channel MOSFETs (20V… 250V); Package: PG-TO263-7; Package: D2PAK 7pin (TO-263 7pin); VDS (max): 60.0 V; RDS (on) (max) (@10V): 1.7 mOhm; RDS (on) (ma
IPB015N04N INFINEON 10+ TO-263-3 N-Channel MOSFETs (20V… 250V); Package: PG-TO263-3; Package: D2PAK (TO-263); VDS (max): 40.0 V; RDS (on) (max) (@10V): 1.4 mOhm; RDS (on) (max) (@4.5V)
IPB011N04N INFINEON 11+ TO-263-7 N-Channel MOSFETs (20V… 250V); Package: PG-TO263-7; Package: D2PAK 7pin (TO-263 7pin); VDS (max): 40.0 V; RDS (on) (max) (@10V): 1.1 mOhm; RDS (on) (ma

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