Model |
Manufacturers |
lot number |
encapsulation |
illustrate |
IDP04E120 |
INFINEON |
10+ |
TO-220 |
肖特基二极管1200V Silicon Power Diodes; Package: PG-TO220-2; IF (typ): 4.0 A; IF (max): 11.2 A; IF,SM (max): 28.0 A; VF (typ): 1.65 V; IR (max): 100.0 µA; |
IDD23E60 |
INFINEON |
10+ |
SOT-252 |
肖特基二极管600V Silicon Power Diodes; Package: PG-TO252-3; IF (typ): 15.0 A; IF (max): 29.2 A; IF,SM (max): 60.0 A; VF (typ): 1.5 V; IR (max): 50.0 µA; |
IDD15E60 |
INFINEON |
10+ |
SOT-252 |
肖特基二极管600V Silicon Power Diodes; Package: PG-TO252-3; IF (typ): 15.0 A; IF (max): 29.2 A; IF,SM (max): 60.0 A; VF (typ): 1.5 V; IR (max): 50.0 µA; |
IDD09E60 |
INFINEON |
2010+ |
PG-TO252-3 |
快恢复二极管600V Silicon Power Diodes; Package: PG-TO252-3; IF (typ): 9.0 A; IF (max): 19.3 A; IF,SM (max): 40.0 A; VF (typ): 1.5 V; IR (max): 50.0 µA; |
IDD06E60 |
INFINEON |
2010+ |
PG-TO252-3 |
600V Silicon Power Diodes; Package: PG-TO252-3; IF (typ): 6.0 A; IF (max): 14.7 A; IF,SM (max): 29.0 A; VF (typ): 1.5 V; IR (max): 50.0 µA |
IDD03E60 |
INFINEON |
2010+ |
PG-TO252-3 |
600V Silicon Power Diodes; Package: PG-TO252-3; IF (typ): 3.0 A; IF (max): 7.3 A; IF,SM (max): 16.0 A; VF (typ): 1.5 V; IR (max): 50.0 µA; |
IDB45E60 |
INFINEON |
2010+ |
TO-263 |
600V Silicon Power Diodes; Package: PG-TO263-3; IF (typ): 45.0 A; IF (max): 71.0 A; IF,SM (max): 162.0 A; VF (typ): 1.5 V; IR (max): 50.0 µA; |
IDB30E60 |
INFINEON |
2010+ |
TO-263 |
600V Silicon Power Diodes; Package: PG-TO263-3; IF (typ): 30.0 A; IF (max): 52.3 A; IF,SM (max): 117.0 A; VF (typ): 1.5 V; IR (max): 50.0 µA; |
IDB30E120 |
INFINEON |
2010+ |
TO-263 |
1200V Silicon Power Diodes; Package: PG-TO263-3; IF (typ): 30.0 A; IF (max): 50.0 A; IF,SM (max): 102.0 A; VF (typ): 1.65 V; IR (max): 100.0 µA; |
IDB23E60 |
Infineon |
2010+ |
SOT263 |
600V Silicon Power Diodes; Package: P-TO263-3; IF (typ): 23.0 A; IF (max): 41.0 A; IF,SM (max): 89.0 A; VF (typ): 1.5 V; IR (max): 50.0 µA; |
IDB18E120 |
Infineon |
2010+ |
SOT263 |
1200V Silicon Power Diodes; Package: PG-TO263-3; IF (typ): 18.0 A; IF (max): 31.0 A; IF,SM (max): 78.0 A; VF (typ): 1.65 V; IR (max): 100.0 µA; |
IDB15E60 |
Infineon |
2010+ |
P-TO220-3-4 |
600V Silicon Power Diodes; Package: PG-TO263-3; IF (typ): 15.0 A; IF (max): 29.2 A; IF,SM (max): 60.0 A; VF (typ): 1.5 V; IR (max): 50.0 µA; |
IDB12E120 |
Infineon |
2010+ |
P-TO220-3-4 |
1200V Silicon Power Diodes; Package: PG-TO263-3; IF (typ): 12.0 A; IF (max): 28.0 A; IF,SM (max): 63.0 A; VF (typ): 1.65 V; IR (max): 100.0 µA; |
IDB09E60 |
Infineon |
2010+ |
TO-263 |
600V Silicon Power Diodes; Package: PG-TO263-3; IF (typ): 9.0 A; IF (max): 19.3 A; IF,SM (max): 40.0 A; VF (typ): 1.5 V; IR (max): 50.0 µA; |
IDB09E120 |
Infineon |
2010+ |
TO-263 |
1200V Silicon Power Diodes; Package: PG-TO263-3; IF (typ): 9.0 A; IF (max): 23.0 A; IF,SM (max): 50.0 A; VF (typ): 1.65 V; IR (max): 100.0 µA; |
IDB06E60 |
Infineon |
2010+ |
TO-263 |
600V Silicon Power Diodes; Package: PG-TO263-3; IF (typ): 6.0 A; IF (max): 14.7 A; IF,SM (max): 29.0 A; VF (typ): 1.5 V; IR (max): 50.0 µA; |
IDB04E120 |
Infineon |
2010+ |
TO-263 |
1200V Silicon Power Diodes; Package: PG-TO263-3; IF (typ): 4.0 A; IF (max): 11.2 A; IF,SM (max): 28.0 A; VF (typ): 1.65 V; IR (max): 100.0 µA; |
ILP03N60 |
INFINEON |
11+ |
TO-220 |
3A, 600V thyristors |
FZ1200R33KL2C |
INFINEON |
11+ |
module |
3300V IGBT module, |
IKW75N60T |
INFINEON |
11+ |
TO-247 |
Rectifier diodes |