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NDS355AN
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NDS355AN

  • 所属类别：场效应管
  • 产品名称：N-Channel Logic Level Enhancement Mode Field Effect Transistor（1.7A，30V，0.125Ω）(N沟道逻辑增强型MOS场效应管（漏电流1.7A, 漏源电压30V，导通电阻0.125Ω）)
  • 厂商：FAIRCHILD
  • 生产批号：2010+
  • 封装：SOT-23-3
  • 库存状态：有库存
  • 库存量：12000
  • 最低订购量：1
  • 详细资料：点击查找NDS355AN的pdf资料
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  • 产品介绍

NDS355AN   N-Channel Logic Level Enhancement Mode Field Effect Transistor（1.7A，30V，0.125Ω）(N沟道逻辑增强型MOS场效应管（漏电流1.7A, 漏源电压30V，导通电阻0.125Ω）)

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RFD14N05LSM9A FAIRCHILD 2010+ TO-252 14A, 50V, 0.100 Ohm, Logic Level,N-Channel Power MOSFETs(14A, 50V, 0.100 Ω, 逻辑电平N 沟道功率MOS场效应管)
RFD14N05LSM FAIRCHILD 2010+ TO-252 14A, 50V, 0.100 Ohm, Logic Level,N-Channel Power MOSFETs(14A, 50V, 0.100 Ω, 逻辑电平N 沟道功率MOS场效应管)
RFD14N05L FAIRCHILD 2010+ TO-251 14A, 50V, 0.100 Ohm, Logic Level,N-Channel Power MOSFETs(14A, 50V, 0.100 Ω, 逻辑电平N 沟道功率MOS场效应管)
NDT451AN FAIRCHILD 2010+ SOT-223 N-Channel Enhancement Mode Field Effect Transistor（7.2A，30V，0.035Ω）(N沟道增强型场效应管（漏电流7.2A, 漏源电压30V，导通电阻0.035Ω）)
NDS356AP FAIRCHILD 2010+ SOT-23-3 P-Channel Logic Level Enhancement Mode Field Effect Transistor（-1.1A，-30V，0.3Ω）(P沟道逻辑增强型MOS场效应管（漏电流-1.1A, 漏源电压-30V，导通电阻0.3Ω）)
NDS352AP FAIRCHILD 2010+ SOT-23-3 P-Channel Logic Level Enhancement Mode Field Effect Transistor（-0.9A，-30V，0.5Ω）(P沟道逻辑增强型MOS场效应管（漏电流-0.9A, 漏源电压-30V，导通电阻0.5Ω）)
FDN5630_NL FAIRCHILD 2010+ SOT-23 60V N-Channel PowerTrench MOSFET; Package: SuperSOT; No of Pins: 3; Container: Tape & Reel
MTP3055VL FAIRCHILD 2010+ TO-220 N沟道增强模式的逻辑电平场效应晶体管 N-Channel Logic Level Enhancement Mode Field Effect Transistor; Package: TO-220AB; No of Pins: 3; Container: Rail
HUF76407D3ST FAIRCHILD 2010+ TO-252 11A,60V, 0.107 Ohm, N-Channe, Logic Level UltraFET Power MOSFET; Package: TO-252(DPAK); No of Pins: 2; Container: Tape & Reel
HUF75882G3 FAIRCHILD 2010+ TO-220 75A, 100V, 0.008 Ohm, N-Channel UltraFET Power MOSFET(75A, 100V, 0.008Ω N沟道逻辑电平功率MOS场效应管)

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