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NDS355AN
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NDS355AN

  • Category:FETs
  • Product Name:N-Channel Logic Level Enhancement Mode Field Effect Transistor (1.7A, 30V, 0.125Ω) (N-Channel Logic Enhanced MOS FET (Leakage Current 1.7A, Drain-Source Voltage 30V, On-Resistance 0.125Ω))
  • Manufacturers:FAIRCHILD
  • Production Batch Number:2010+
  • Encapsulation:SOT-23-3
  • Stock Status:There is stock
  • Stock Quantity:12000
  • Minimum order quantity: 1
  • Details:انقر للعثور على مواد PDF NDS355AN
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  • Product introduction

NDS355ANN-Channel Logic Level Enhancement Mode Field Effect Transistor (1.7A, 30V, 0.125Ω) (N-Channel Logic Enhanced MOS FET (Leakage Current 1.7A, Drain-Source Voltage 30V, On-Resistance 0.125Ω))

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