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NDS355AN
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NDS355AN

  • 所属类别:场效应管
  • 产品名称:N-Channel Logic Level Enhancement Mode Field Effect Transistor(1.7A,30V,0.125Ω)(N沟道逻辑增强型MOS场效应管(漏电流1.7A, 漏源电压30V,导通电阻0.125Ω))
  • 厂商:FAIRCHILD
  • 生产批号:2010+
  • 封装:SOT-23-3
  • 库存状态:有库存
  • 库存量:12000
  • 最低订购量:1
  • 详细资料:点击查找NDS355AN的pdf资料
  • 点击询价
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  • 产品介绍

NDS355AN   N-Channel Logic Level Enhancement Mode Field Effect Transistor(1.7A,30V,0.125Ω)(N沟道逻辑增强型MOS场效应管(漏电流1.7A, 漏源电压30V,导通电阻 0.125Ω))

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RFD14N05LSM9A FAIRCHILD 2010+ TO-252 14A, 50V, 0.100 Ohm, Logic Level,N-Channel Power MOSFETs(14A, 50V, 0.100 Ω, 逻辑电平N 沟道功率MOS场效应管)
RFD14N05LSM FAIRCHILD 2010+ TO-252 14A, 50V, 0.100 Ohm, Logic Level,N-Channel Power MOSFETs(14A, 50V, 0.100 Ω, 逻辑电平N 沟道功率MOS场效应管)
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NDS352AP FAIRCHILD 2010+ SOT-23-3 P-Channel Logic Level Enhancement Mode Field Effect Transistor(-0.9A,-30V,0.5Ω)(P沟道逻辑增强型MOS场效应管(漏电流-0.9A, 漏源电压-30V,导通电阻0.5Ω))
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