| 型号 |
厂商 |
批号 |
封装 |
说明 |
|
IRFR9120NCTRPBF
|
IR |
10+ |
SOT-263 |
P Channel Surface Mount HEXFET Power MOSFET(P沟道表贴型HEXFET功率MOS场效应管) |
|
IRF5210LPBF
|
IR |
10+ |
SOT-263 |
HEXFET Power MOSFET |
|
IRF9540NLPBF
|
IR |
10+ |
SOT-263 |
HEXFET POWER MOSFET (VDSS = -100V , RDS(on) = 117mヘ , ID = -23A ) |
|
IRF9530NLPBF
|
IR |
10+ |
TO-262 |
Advanced Process Technology Surface Mount |
|
IRF9520NLPBF
|
IR |
10+ |
TO-235 |
-100V Single P-Channel HEXFET Power MOSFET in a TO-262 package; Similar to IRF9520NL with Lead Free Packaging |
|
IRF633
|
IR |
10+ |
TO-220 |
N-Channel Power MOSFETs, 12A, 150-200 V |
|
IRF632
|
IR |
10+ |
TO-220 |
N-Channel Power MOSFETs, 12A, 150-200 V |
|
IRF631
|
IR |
10+ |
TO-220 |
N-Channel Power MOSFETs, 12A, 150-200 V |
|
IRF634STRRPBF
|
IR |
10+ |
TO-263 |
N-Channel Power MOSFET(N沟道增强型功率MOS场效应管（漏源电压为250V，导通电阻为0.45Ω，漏电流为8.1A）) |
|
IRF634STRR
|
IR |
10+ |
TO-263 |
N-Channel Power MOSFET(N沟道增强型功率MOS场效应管（漏源电压为250V，导通电阻为0.45Ω，漏电流为8.1A）) |
|
IRF634STRLPBF
|
IR |
10+ |
TO-263 |
N-Channel Power MOSFET(N沟道增强型功率MOS场效应管（漏源电压为250V，导通电阻为0.45Ω，漏电流为8.1A）) |
|
IRF634STRL
|
IR |
10+ |
TO-263 |
N-Channel Power MOSFET(N沟道增强型功率MOS场效应管（漏源电压为250V，导通电阻为0.45Ω，漏电流为8.1A）) |
|
IRF634SPBF
|
IR |
10+ |
TO-263 |
N-Channel Power MOSFET(N沟道增强型功率MOS场效应管（漏源电压为250V，导通电阻为0.45Ω，漏电流为8.1A）) |
|
IRF634S
|
IR |
10+ |
TO-263 |
N-Channel Power MOSFET(N沟道增强型功率MOS场效应管（漏源电压为250V，导通电阻为0.45Ω，漏电流为8.1A）) |
|
IRF634PBF
|
IR |
10+ |
TO-220 |
N-Channel Power MOSFET(N沟道增强型功率MOS场效应管（漏源电压为250V，导通电阻为0.45Ω，漏电流为8.1A）) |
|
IRF634NSPBF
|
IR |
10+ |
TO-220 |
N-Channel Power MOSFET(N沟道增强型功率MOS场效应管（漏源电压为250V，导通电阻为0.45Ω，漏电流为8.1A）) |
|
IRF634NS
|
IR |
10+ |
TO-220 |
N-Channel Power MOSFET(N沟道增强型功率MOS场效应管（漏源电压为250V，导通电阻为0.45Ω，漏电流为8.1A）) |
|
IRF634NPBF
|
IR |
10+ |
TO-220 |
N-Channel Power MOSFET(N沟道增强型功率MOS场效应管（漏源电压为250V，导通电阻为0.45Ω，漏电流为8.1A）) |
|
IRF634N
|
IR |
10+ |
TO-220 |
N-Channel Power MOSFET(N沟道增强型功率MOS场效应管（漏源电压为250V，导通电阻为0.45Ω，漏电流为8.1A）) |
|
IRF634
|
IR |
10+ |
TO-220 |
N-Channel Power MOSFET(N沟道增强型功率MOS场效应管（漏源电压为250V，导通电阻为0.45Ω，漏电流为8.1A）) |