Intel's first-generation 64-layer QLC flash yield is only 48%

Earlier this month, Intel released its first consumer-grade QLC solid state drive, the 660p, with a new main controller and 64-layer stacked QLC NAND particles, but it was recently reported that the yield of the first generation of 64-layer QLC flash memory is only 48%.

Intel's "SSD 660p" will be positioned between 600p and 700p, with a new main controller and 64-layer stacked QLC NAND particles, available in 512 GB, 1 TB, and 2 TB capacities. The SSD 660p is designed with dedicated PCI Express 3.0 x4 in M.2 2280 form factor with transfer speeds of up to 1800 MB/s read, 1100 MB/s write, and 150,000 IOPS in 4k random reads and writes.

The 660P is equipped with Silicon Motion SMI2263 main controller with DRAM cache, which is an improved version of Silicon Motion's SMI2262EN process, and the firmware is written by Intel. Uses 4-bit QLC flash memory from the IMFlash factory, a joint venture between Intel and Micron.

 

Intel 660P uses the M.2 NVMe interface and supports PCIe 3.0 x4 lanes, and the official data given by Intel shows that the performance reaches the level of mainstream M.2 NVMe, with a maximum sequential read and write speed of up to 1800MB/s.

At the same time, the price is quite impressive, with 512GB selling for $99.99 (about 683 yuan).

Compared with TLC, the storage capacity of QLC NAND Flash will be increased by 33%, a single chip can reach up to 256GB or 512GB, and the P/E cycle is about 1000 times, which is slightly lower than TLC.

However, it is reported that the yield rate of the first generation of 64-layer QLC flash memory is only 48%, that is, more than half of the pieces produced are scrapped. In contrast, the yield of 64-layer TLC flash memory has reached more than 90%.

This means that 4-bit QLC appears to have increased capacity density, but the actual cost is higher than that of 3-bit TLC.

To make matters worse, sources say that the poor yield of Intel's first-generation QLC flash memory will be with you throughout its lifetime.

In addition, Intel has also prepared SSD 760p series, M.2 2280 specifications, 64-layer TLC NAND flash memory, providing 128GB, 256GB, 512GB, 1TB, 2TB capacities, performance is a notch higher, sustained read and write up to 3.2GB/s, 1.6GB/s, random read and write up to 350,000 IOPS, 280,000 IOPS, and supports AES-256 hardware encryption, 5-year product warranty. Among them, 128GB to 1TB will be released in December this year.

In addition to launching 64-layer QLC to improve technical advantages, Intel and Micron have also said that the development of third-generation 3D NAND technology (96 layers) will be delivered by the end of 2018 or early 2019.