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TLE2021-EP
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TLE2021-EP

  • 所属类别:低偏移电压
  • 产品名称:增强型产品精密低功耗单电源运算放大器
  • 厂商:TI
  • 生产批号:10+
  • 封装:8SOIC
  • 库存状态:有库存
  • 库存量:5000
  • 最低订购量:1
  • 详细资料:点击查找TLE2021-EP的pdf资料
  • 点击询价
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  • Product Introduction

The precision, high-speed, low-power amplifiers of the TLE202x and TLE202xA units use a new Texas instrument process for the Excalibur sword.The combination of the best features of these devices, Chapter 21 with height boost rate and unit gain bandwidth kill.

Utilizing complementary bipolar disorders in the splicing process, isolated vertical PNPs yield surprisingly advanced unit gain bandwidth and kill rates over similar devices.

A bias circuit is added in combination with this process results in very stable parameters over time and temperature.This means that a precision device is still a precision device with a change in temperature, even for many years of use.

This combines excellent DC performance with a common mode input voltage range, including a negative rail, making these devices ideal for novices in signal processing applications in either a single supply or split-supply configuration.

characteristic
  • Control baseline
    • One website, one assembly/test production site
  • Temperature - 40° performance extended to 125°C C
  • Also available from -55°C to 125°C
  • Enhanced support for Declining Manufacturing Sources (DMS).
  • Enhanced product-change notifications
  • Qualification Pedigree (1)
  • Supply current... 300μA Max
  • High unit gain bandwidth... 2 MHz typing
  • High kill rate... 0.45 V/μs min
  • Supply-Current temperature variation range. Full ± 10 μA stream at ± 15 V = VCC
  • Specifies 15-V±5V single supply and two operations
  • Phase-Reversal protection
  • High open-loop gain. 6.5 V/μV (136 dB) typing
  • Low bias voltage... 100 μV Max
  • The offset voltage drift over time flows 0.005 μV/molybdenum
  • Low input bias current... 50 sodium max
  • Low noise voltage... 19 Vidic/hertztyping

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