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IPD25CN10N
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IPD25CN10N

  • 所属类别：场效应管
  • 产品名称：功率晶体管 N-Channel MOSFETs (20V…250V); Package: PG-TO252-3; Package: DPAK (TO-252); VDS (max): 100.0 V; RDS (on) (max) (@10V): 25.0 mOhm; RDS (on) (max)
  • 厂商：INFINEON
  • 生产批号：2010+
  • 封装：SOT-252
  • 库存状态：有库存
  • 库存量：16000
  • 最低订购量：1
  • 详细资料：点击查找IPD25CN10N的pdf资料
  • 点击询价
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  • 产品介绍

IPD25CN10N       功率晶体管     N-Channel MOSFETs (20V… 250V); Package: PG-TO252-3; Package: DPAK (TO-252); VDS (max): 100.0 V; RDS (on) (max) (@10V): 25.0 mOhm; RDS (on) (max) (@4.5V): -; ID (max): 35.0 A

与IPD25CN10N相关的IC还有：


型号 厂商 批号 封装 说明
IPD78CN10N INFINEON 2010+ SOT-252 功率晶体管 N-Channel MOSFETs (20V…250V); Package: PG-TO252-3; Package: DPAK (TO-252); VDS (max): 100.0 V; RDS (on) (max) (@10V): 78.0 mOhm; RDS (on) (max)
IPD64CN10N INFINEON 2010+ SOT-252 功率晶体管 N-Channel MOSFETs (20V…250V); Package: PG-TO252-3; Package: DPAK (TO-252); VDS (max): 100.0 V; RDS (on) (max) (@10V): 64.0 mOhm; RDS (on) (max)
IPD49CN10N INFINEON 2010+ SOT-252 功率晶体管 N-Channel MOSFETs (20V…250V); Package: PG-TO252-3; Package: DPAK (TO-252); VDS (max): 100.0 V; RDS (on) (max) (@10V): 49.0 mOhm; RDS (on) (max)
IPD33CN10N INFINEON 2010+ SOT-252 功率晶体管 N-Channel MOSFETs (20V…250V); Package: PG-TO252-3; Package: DPAK (TO-252); VDS (max): 100.0 V; RDS (on) (max) (@10V): 33.0 mOhm; RDS (on) (max)
IPD25CNE8N INFINEON 2010+ SOT-252 功率晶体管 N-Channel MOSFETs (20V…250V); Package: PG-TO252-3; Package: DPAK (TO-252); VDS (max): 100.0 V; RDS (on) (max) (@10V): 25.0 mOhm; RDS (on) (max)
IPD20N03L INFINEON 2010+ SOT-252 功率晶体管 N-Channel MOSFETs (20V…250V); Package: PG-TO252-3; Package: DPAK (TO-252); VDS (max): 30.0 V; RDS (on) (max) (@10V): 20.0 mOhm; RDS (on) (max)
IPD16CNE8N INFINEON 2010+ SOT-252 功率晶体管 N-Channel MOSFETs (20V…250V); Package: PG-TO252-3; Package: DPAK (TO-252); VDS (max): 85.0 V; RDS (on) (max) (@10V): 16.0 mOhm; RDS (on) (max)
IPD16CN10N INFINEON 2010+ SOT-252 功率晶体管 N-Channel MOSFETs (20V…250V); Package: PG-TO252-3; Package: DPAK (TO-252); VDS (max): 100.0 V; RDS (on) (max) (@10V): 16.0 mOhm; RDS (on) (max)
IPD144N06NG INFINEON 2010+ SOT-252 功率晶体管
IPD13N03LA INFINEON 2010+ SOT-252 功率晶体管 Flat / Ribbon Cable; Number of Conductors:10; Pitch Spacing:0.05"; Conductor Size AWG:28; No. Strands x Strand Size:7 x 36; Conductor Material:C

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型号 厂商 批号 封装 说明
IPD20N03L INFINEON 2010+ SOT-252 功率晶体管 N-Channel MOSFETs (20V…250V); Package: PG-TO252-3; Package: DPAK (TO-252); VDS (max): 30.0 V; RDS (on) (max) (@10V): 20.0 mOhm; RDS (on) (max)
IPD16CNE8N INFINEON 2010+ SOT-252 功率晶体管 N-Channel MOSFETs (20V…250V); Package: PG-TO252-3; Package: DPAK (TO-252); VDS (max): 85.0 V; RDS (on) (max) (@10V): 16.0 mOhm; RDS (on) (max)
IPD16CN10N INFINEON 2010+ SOT-252 功率晶体管 N-Channel MOSFETs (20V…250V); Package: PG-TO252-3; Package: DPAK (TO-252); VDS (max): 100.0 V; RDS (on) (max) (@10V): 16.0 mOhm; RDS (on) (max)
IPD144N06NG INFINEON 2010+ SOT-252 功率晶体管
IPD13N03LA INFINEON 2010+ SOT-252 功率晶体管 Flat / Ribbon Cable; Number of Conductors:10; Pitch Spacing:0.05"; Conductor Size AWG:28; No. Strands x Strand Size:7 x 36; Conductor Material:C
IPD135N03LG INFINEON 2010+ SOT-252 功率晶体管 N-Channel MOSFETs (20V…250V); Package: PG-TO252-3; Package: DPAK (TO-252); VDS (max): 30.0 V; RDS (on) (max) (@10V): 13.5 mOhm; RDS (on) (max) (
IPD12CNE8N INFINEON 2010+ TO252-3 功率晶体管 N-Channel MOSFETs (20V…250V); Package: PG-TO252-3; Package: DPAK (TO-252); VDS (max): 85.0 V; RDS (on) (max) (@10V): 12.4 mOhm; RDS (on) (max) (
IPD12CN10N INFINEON 2010+ TO252-3 功率晶体管 N-Channel MOSFETs (20V…250V); Package: PG-TO252-3; Package: DPAK (TO-252); VDS (max): 100.0 V; RDS (on) (max) (@10V): 12.4 mOhm; RDS (on) (max)
IPD10N03LA INFINEON 2010+ TO252-3 功率晶体管 N-Channel MOSFETs (20V…250V); Package: PG-TO252-3; Package: DPAK (TO-252); VDS (max): 25.0 V; RDS (on) (max) (@10V): 10.4 mOhm; RDS (on) (max) (
IPD09N03LB INFINEON 2010+ TO252-3 功率晶体管 N-Channel MOSFETs (20V…250V); Package: PG-TO252-3; Package: DPAK (TO-252); VDS (max): 30.0 V; RDS (on) (max) (@10V): 9.1 mOhm; RDS (on) (max) ( @
IPD090N03LG INFINEON 2010+ TO-252 功率晶体管 N-Channel MOSFETs (20V…250V); Package: PG-TO252-3; Package: DPAK (TO-252); VDS (max): 30.0 V; RDS (on) (max) (@10V): 9.0 mOhm; RDS (on) (max) ( @
IPD06N03LB INFINEON 2010+ TO-252 功率晶体管 N-Channel MOSFETs (20V…250V); Package: PG-TO252-3; Package: DPAK (TO-252); VDS (max): 30.0 V; RDS (on) (max) (@10V): 6.1 mOhm; RDS (on) (max) ( @
IPD06N03LA INFINEON 2010+ SOT-252 功率晶体管 N-Channel MOSFETs (20V…250V); Package: PG-TO252-3; Package: DPAK (TO-252); VDS (max): 25.0 V; RDS (on) (max) (@10V): 5.1 mOhm; RDS (on) (max) ( @
IPD060N03LG INFINEON 2010+ SOT-252 功率晶体管 N-Channel MOSFETs (20V…250V); Package: PG-TO252-3; Package: DPAK (TO-252); VDS (max): 25.0 V; RDS (on) (max) (@10V): 5.1 mOhm; RDS (on) (max) ( @
IPD05N03LB INFINEON 2010+ SOT-252 功率晶体管 N-Channel MOSFETs (20V…250V); Package: PG-TO252-3; Package: DPAK (TO-252); VDS (max): 25.0 V; RDS (on) (max) (@10V): 5.1 mOhm; RDS (on) (max) ( @
IPD05N03LA INFINEON 2010+ SOT-252 功率晶体管 N-Channel MOSFETs (20V…250V); Package: PG-TO252-3; Package: DPAK (TO-252); VDS (max): 25.0 V; RDS (on) (max) (@10V): 5.1 mOhm; RDS (on) (max) ( @
IPD04N03LB INFINEON 2010+ SOT-252 功率晶体管 N-Channel MOSFETs (20V…250V); Package: PG-TO252-3; Package: DPAK (TO-252); VDS (max): 25.0 V; RDS (on) (max) (@10V): 3.2 mOhm; RDS (on) (max) ( @
IPD04N03LA INFINEON 2010+ SOT-252 功率晶体管 N-Channel MOSFETs (20V…250V); Package: PG-TO252-3; Package: DPAK (TO-252); VDS (max): 25.0 V; RDS (on) (max) (@10V): 3.2 mOhm; RDS (on) (max) ( @
IPD040N03LG INFINEON 2010+ SOT-252 功率晶体管 N-Channel MOSFETs (20V…250V); Package: PG-TO252-3; Package: DPAK (TO-252); VDS (max): 25.0 V; RDS (on) (max) (@10V): 3.2 mOhm; RDS (on) (max) ( @
IPD03N03LB INFINEON 2010+ SOT-252 功率晶体管 N-Channel MOSFETs (20V…250V); Package: PG-TO252-3; Package: DPAK (TO-252); VDS (max): 25.0 V; RDS (on) (max) (@10V): 3.2 mOhm; RDS (on) (max) ( @

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